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Title:
THIN FILM TRANSISTOR AND IMAGE DISPLAY APPARATUS
Document Type and Number:
WIPO Patent Application WO/2013/046606
Kind Code:
A1
Abstract:
A gate electrode (1) and a capacitor electrode (2), which have high optical transparency and high conductivity, can be formed by making each of the gate electrode (1) and the capacitor electrode (2) has a double layer structure, and forming first layers (1a, 2a) using an indium tin oxide (ITO), said first layers being in contact with an insulating substrate (0), and by having respective second layers (1b, 2b) configured of metal oxide layers, said second layers being in contact with a gate insulating layer (3). Consequently, optical transparency of a thin film transistor, and display performance of an image display apparatus using the thin film transistor can be improved using the gate electrode (1) and the capacitor electrode (2).

Inventors:
IMAMURA CHIHIRO (JP)
ITO MANABU (JP)
Application Number:
PCT/JP2012/005981
Publication Date:
April 04, 2013
Filing Date:
September 20, 2012
Export Citation:
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Assignee:
TOPPAN PRINTING CO LTD (JP)
International Classes:
H01L29/786; G02F1/1335; G02F1/1368; H01L21/28; H01L21/336; H01L29/423; H01L29/49
Foreign References:
JP2008286911A2008-11-27
JP2011049297A2011-03-10
JP2006133769A2006-05-25
JP2010152298A2010-07-08
JPH1022505A1998-01-23
JP2010147458A2010-07-01
JPH02244641A1990-09-28
JPH11194362A1999-07-21
Attorney, Agent or Firm:
HIROSE, Hajime et al. (JP)
Hirose 1 (JP)
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Claims:



 
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