THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - KUNSHAN NEW FLAT PANEL DISPLAY TECHNOLOGY CT CO LTD

Title:

THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

Document Type and Number:

WIPO Patent Application WO/2016/192624

Kind Code:

A1

Abstract:

A thin film transistor and manufacturing method thereof. The thin film transistor comprises: an upper gate electrode (1), a lower gate electrode (4), an upper insulation layer (6), a lower insulation layer (7), a semiconductor layer (5), a source electrode (2) and a drain electrode (3). The lower insulation layer (7) is provided over the lower gate electrode (4), the semiconductor layer (5) is provided over the lower insulation layer (7) and connected to the source electrode (2) and the drain (3) respectively. The upper insulation layer (6) covers over the semiconductor layer (5), and the upper gate electrode (1) is provided over the upper insulation layer (6), wherein, on a plane parallel to a conductive channel in the semiconductor layer (5), a first gap (8) exists between an orthographic projection of the upper gate electrode (1) and an orthographic projection of the source electrode (2), and a second gap (9) exists between the orthographic projection of the upper gate electrode (1) and an orthographic projection of the drain electrode (3).

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Inventors:

SHAN QI (CN)
HUANG XIUQI (CN)
CAI SHIXING (CN)
ZHANG XIAOBAO (CN)
GUO RUI (CN)
LIN LI (CN)
GAO XIAOYU (CN)

Application Number:

PCT/CN2016/084245

Publication Date:

December 08, 2016

Filing Date:

June 01, 2016

Export Citation:

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Assignee:

KUNSHAN NEW FLAT PANEL DISPLAY TECHNOLOGY CT CO LTD (CN)
KUNSHAN GOVISIONOX OPTOELECTRONICS CO LTD (CN)

International Classes:

H01L29/41

Foreign References:

CN104409512A	2015-03-11
CN101071845A	2007-11-14
CN1527400A	2004-09-08

Other References: