Title:
THIN FILM TRANSISTOR, AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2020/015016
Kind Code:
A1
Abstract:
A thin film transistor, and a manufacturing method for the same. The method comprises: depositing a first metal layer (20) on a substrate (10); depositing a semiconductor material layer (30) on the first metal layer, patterning the semiconductor material layer by means of a first photolithographic process, and forming a semiconductor active layer (30a); and depositing a second metal layer (60) on the first metal layer and the semiconductor active layer, patterning the first metal layer and the second metal layer by means of a second photolithographic process, and obtaining a first electrode (61), a second electrode (63), and a third electrode (62), wherein the first electrode and the second electrode are spaced apart, the third electrode is disposed on the semiconductor active layer, and projections of the second electrode and the third electrode on a horizontal plane overlap. The method reduces the number of process steps and reduces costs.
Inventors:
XIA HUI (CN)
TAN ZHIWEI (CN)
TAN ZHIWEI (CN)
Application Number:
PCT/CN2018/098004
Publication Date:
January 23, 2020
Filing Date:
August 01, 2018
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L29/41; H01L21/336; H01L29/786
Foreign References:
| CN105655403A | 2016-06-08 | |||
| CN101546077A | 2009-09-30 | |||
| CN103022148A | 2013-04-03 | |||
| CN102338955A | 2012-02-01 |
Attorney, Agent or Firm:
MING & YUE INTELLECTUAL PROPERTY LAW FIRM (CN)
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