THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, ARRAY SUBSTRATE, AND DISPLAY DEVICE

WIPO Patent Application WO/2019/062260

A1

Disclosed in the present invention are a method for manufacturing a thin-film transistor, an array substrate, and a display device. The method for manufacturing a thin-film transistor comprises: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by means of a patterning process and by using a gas containing CO as an etching gas, to form a gate; performing ion implantation on the active layer by using the gate as a mask to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and forming a source and a drain.

WO/2005/043629	METHOD FOR PRODUCING A VERTICAL FIELD EFFECT TRANSISTOR
JP4970622	Semiconductor device, liquid crystal display device with semiconductor device, manufacturing method of semiconductor device
WO/1997/015948	ELECTRONIC DEVICES COMPRISING THIN-FILM CIRCUITRY

SUZUKI KOJI (CN)
CHEN ZHUO (CN)
ZHANG YIXIAN (CN)
ZHANG FAN (CN)
REN SIYU (CN)
SU JUNHAI (CN)
LI JIANHUA (CN)

PCT/CN2018/094790

April 04, 2019

July 06, 2018

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TRULY HUIZHOU SMART DISPLAY LTD (CN)

H01L29/786

CN107731929A	2018-02-23
CN105428240A	2016-03-23
US20150144154A1	2015-05-28
CN106684154A	2017-05-17

ADVANCE CHINA IP LAW OFFICE (CN)

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