Title:
THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2022/168983
Kind Code:
A1
Abstract:
In the present invention, a gate insulation layer comprises: a first gate insulating film 21 constituted from an organic polymer compound covering a gate electrode layer and a second portion of a support surface; and a second gate insulating film 22 sandwiched by the first gate insulating film 21 and a semiconductor layer 13 and constituted from an inorganic silicon compound. The second gate insulating film 22 has a thickness of 2-30 nm (inclusive) and a hydrogen content of 5-13 at% (inclusive), whereby the electrical durability of a thin-film transistor with respect to bending of a flexible substrate is improved.
Inventors:
IMAMURA CHIHIRO (JP)
ITO MANABU (JP)
TANAKA YUKIKAZU (JP)
ITO MANABU (JP)
TANAKA YUKIKAZU (JP)
Application Number:
PCT/JP2022/004765
Publication Date:
August 11, 2022
Filing Date:
February 07, 2022
Export Citation:
Assignee:
TOPPAN INC (JP)
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| WO2014196107A1 | 2014-12-11 |
Foreign References:
| JP2009246342A | 2009-10-22 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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