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Title:
THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/155189
Kind Code:
A1
Abstract:
A thin-film transistor and a preparation method therefor, an array substrate containing the thin-film transistor and a preparation method therefor, and a display device containing the array substrate, which relate to the technical field of display and can simplify the manufacturing process of a thin-film transistor, thereby saving on cost. The preparation method for a thin-film transistor comprises the steps of forming a gate electrode (10), a gate insulation layer (20), a semiconductor active layer (30), a source electrode (401) and a drain electrode (402) on a substrate, wherein the step of forming the gate insulation layer (20) and the semiconductor active layer (30) comprises preparing an insulation layer thin film (200), wherein a material of the insulation layer thin film (200) comprises a metal oxide insulation material; implanting ions into a pre-determined region (R) of the insulation layer thin film (200) to transform the metal oxide insulation material of the insulation layer thin film (200) of a part of the thickness in the pre-determined region (R) into a metal oxide semiconductor material, so as to form the semiconductor active layer (30), with the remaining insulation layer thin film (200) forming the gate insulation layer (20).

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Inventors:
LIU WEI (CN)
JIANG CHUNSHENG (CN)
Application Number:
PCT/CN2015/086748
Publication Date:
October 06, 2016
Filing Date:
August 12, 2015
Export Citation:
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Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L21/336
Foreign References:
CN104752231A2015-07-01
CN202549848U2012-11-21
US20090194797A12009-08-06
US5907780A1999-05-25
US20080176384A12008-07-24
CN103730346A2014-04-16
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
北京天昊联合知识产权代理有限公司 (CN)
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