Title:
THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR AND SENSOR
Document Type and Number:
WIPO Patent Application WO/2020/024856
Kind Code:
A1
Abstract:
A thin film transistor, a preparation method therefor, and a sensor, the thin film transistor comprising a substrate (121), and a source (124), a drain (125) and an active layer (126) which are provided on the substrate (121); a micro-channel (40) is provided in the active layer (126), the thin film transistor being used for testing a sample in the micro-channel (40); when the sample to be tested enters the micro-channel (40), the distribution of electrons in the active layer (126) is affected, causing fluctuations in TFT characteristics; and by detecting the fluctuations in the TFT characteristics, the technical effect of testing the components and properties of a liquid to be tested can be achieved. By means of the micro-channel (40), the sample therein can be precisely controlled, and the influence from the external environment is reduced, improving the detection precision; furthermore, continuous monitoring rather than one-time detection can be performed on the sample, improving sample detection efficiency.
Inventors:
MA XIAOCHEN (CN)
YUAN GUANGCAI (CN)
NING CE (CN)
HU HEHE (CN)
GU XIN (CN)
YUAN GUANGCAI (CN)
NING CE (CN)
HU HEHE (CN)
GU XIN (CN)
Application Number:
PCT/CN2019/097455
Publication Date:
February 06, 2020
Filing Date:
July 24, 2019
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
G01N27/414; H01L29/786
Foreign References:
| CN109060922A | 2018-12-21 | |||
| CN106098941A | 2016-11-09 | |||
| KR101638501B1 | 2016-07-11 | |||
| US20180106756A1 | 2018-04-19 | |||
| US20160351840A1 | 2016-12-01 | |||
| CN101592627A | 2009-12-02 | |||
| US20130200438A1 | 2013-08-08 | |||
| CN105021683A | 2015-11-04 | |||
| CN104807869A | 2015-07-29 |
Attorney, Agent or Firm:
CHINA PATENT AGENT (H.K.) LTD. (CN)
Download PDF: