Title:
THIN-FILM TRANSISTOR, AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/074608
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a thin-film transistor having excellent electrical characteristics. This thin-film transistor is provided with: a gate insulation layer which is formed from an oxide including zirconium, and a metal selected from the group consisting of cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, and yttrium, or formed from an oxide including at least one metal element selected from the group consisting of hafnium, zirconium, and aluminium; and an oxide semiconductor layer formed from an oxide selected from the group consisting of oxides including indium, oxides including indium and tin, oxides including indium and zinc, oxides including indium, zirconium, and zinc, oxides including indium and gallium, and oxides including indium, zinc, and gallium.
Inventors:
SHIMODA TATSUYA (JP)
LI JINWANG (JP)
KOYAMA HIROAKI (JP)
LI JINWANG (JP)
KOYAMA HIROAKI (JP)
Application Number:
PCT/JP2017/038087
Publication Date:
April 26, 2018
Filing Date:
October 20, 2017
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD (JP)
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH (JP)
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH (JP)
International Classes:
H01L29/786; C01G25/00; H01L21/316; H01L21/336
Domestic Patent References:
| WO2016167064A1 | 2016-10-20 |
Foreign References:
| JP2015060962A | 2015-03-30 | |||
| JP2011249432A | 2011-12-08 |
Attorney, Agent or Firm:
TANI & ABE, P.C. (JP)
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