THIN-FILM TRANSISTOR, PRODUCTION METHOD THEREFOR, AND SOLUTION FOR FORMING GATE INSULATION FILM FOR THIN-FILM TRANSISTOR

Title:

THIN-FILM TRANSISTOR, PRODUCTION METHOD THEREFOR, AND SOLUTION FOR FORMING GATE INSULATION FILM FOR THIN-FILM TRANSISTOR

Document Type and Number:

WIPO Patent Application WO/2018/074607

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide: a thin-film transistor having excellent transistor characteristics; and a production method in which the process temperature is 200˚C or lower. This thin-film transistor is provided with: a gate insulation layer which is either formed from an oxide including Zr, and a metal element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, the atomic ratio of the metal element to the zirconium being such that the number of atoms of Zr is 1.5 or higher when the number of atoms of the metal element is 1, or formed from an oxide including at least one metal element selected from the group consisting of Hf, Zr, and Al; and an oxide semiconductor layer which is formed from an oxide selected from the group consisting of oxides including In, oxides including In and Sn, oxides including In and Zn, oxides including In, Zr, and Zn, oxides including In and Ga, and oxides including In, Zn, and Ga.

Inventors:

SHIMODA TATSUYA (JP)
LI JINWANG (JP)
KOYAMA HIROAKI (JP)

Application Number:

PCT/JP2017/038086

Publication Date:

April 26, 2018

Filing Date:

October 20, 2017

Export Citation:

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Assignee:

TOPPAN PRINTING CO LTD (JP)
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH (JP)

International Classes:

H01L29/786; H01L21/283; H01L21/336

Domestic Patent References:

WO2016167064A1

2016-10-20

Foreign References:

JP2015005672A	2015-01-08
JP2015060962A	2015-03-30
JP2014199919A	2014-10-23
JP2013131685A	2013-07-04
JP2008091904A	2008-04-17
JP2011216845A	2011-10-27

Other References:

LI, JINWANG ET AL.: "Hybrid Cluster Precursors of the LaZrO Insulator for Transistors: Properties of High-Temperature-Processed Films and Structures of Solutions, Gels, and Solids", SCIENTIFIC REPORTS, vol. 6, no. 29682, 14 July 2016 (2016-07-14), pages 1 - 15, XP055605961, DOI: 10.1038/srep29682

Attorney, Agent or Firm:

TANI & ABE, P.C. (JP)

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