THIN FILM TRANSISTOR SUBSTRATE PROVIDED WITH PROTECTIVE FILM AND METHOD FOR PRODUCING SAME - NARA INSTITUTE OF SCIENCE AND TECHNOLOGY NATIONAL UNIV CORPORATION

Title:

THIN FILM TRANSISTOR SUBSTRATE PROVIDED WITH PROTECTIVE FILM AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2018/097284

Kind Code:

A1

Abstract:

[Problem] To provide a thin film transistor substrate which is provided with a protective film, and which enables the achievement of high driving stability. [Solution] A thin film transistor substrate which comprises a thin film transistor and a protective film that is formed of a cured product of a siloxane composition and covers the thin film transistor. This thin film transistor substrate is characterized in that: the thin film transistor has a semiconductor layer that is formed of an oxide semiconductor; and the siloxane composition contains a polysiloxane, a fluorine-containing compound and a solvent.

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Inventors:

URAOKA YUKIHARU (JP)
ISHIKAWA YASUAKI (JP)
YOSHIDA NAOFUMI (JP)
TANIGUCHI KATSUTO (JP)
NONAKA TOSHIAKI (JP)

Application Number:

PCT/JP2017/042381

Publication Date:

May 31, 2018

Filing Date:

November 27, 2017

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Assignee:

NARA INSTITUTE OF SCIENCE AND TECHNOLOGY NATIONAL UNIV CORPORATION (JP)
MERCK PATENT GMBH (DE)

International Classes:

C08G77/04; H01L21/336; C09D183/04; H01L21/312; H01L29/786

Domestic Patent References:

WO2013187507A1	2013-12-19
WO2009075233A1	2009-06-18
WO2016152090A1	2016-09-29

Foreign References:

JP2015146332A	2015-08-13
JP2011100980A	2011-05-19

Attorney, Agent or Firm:

NAGAI Hiroshi et al. (JP)

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