Title:
THIN FILM TRANSISTOR, TFT SUBSTRATE, DISPLAY DEVICE, AND TFT SUBSTRATE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/162978
Kind Code:
A1
Abstract:
Provided is a thin film transistor 14 that is equipped with: a gate 11b; an insulating film covering the gate 11b; a semiconductor layer 15 formed on the insulating film; and a source 12b and a drain 12c formed on the semiconductor layer 15, said source and drain being separated from each other. A space between the source 12b and the drain 12c of the semiconductor layer 15 is a channel 15a. The thin film transistor 14 is characterized in that the channel 15a is extending in the direction in which the source 12b and the drain 12c face each other, and the channel has a bent portion bent to the gate 11b side or to the side opposite to the gate 11b. Also provided are a TFT substrate equipped with the thin film transistor 14, and a method for manufacturing the TFT substrate. In the present invention, the width of the channel 15a is increased, and on-current reduction can be suppressed even in the cases where the thin film transistor 14 projection area on the TFT substrate is reduced, and specifically, the present invention is advantageous to large TFT substrates.
Inventors:
UTSUGI SATORU (JP)
Application Number:
PCT/JP2015/060998
Publication Date:
October 13, 2016
Filing Date:
April 08, 2015
Export Citation:
Assignee:
SAKAI DISPLAY PRODUCTS CORP (JP)
International Classes:
H01L29/786
Foreign References:
| JP2005150328A | 2005-06-09 | |||
| JPH02140980A | 1990-05-30 | |||
| JP2006245371A | 2006-09-14 | |||
| JPH11354796A | 1999-12-24 | |||
| JP2006339265A | 2006-12-14 | |||
| JP2007194297A | 2007-08-02 |
Attorney, Agent or Firm:
KOHNO, Hideto et al. (JP)
Hidehito Kono (JP)
Hidehito Kono (JP)
Download PDF:
Previous Patent: CEILING-EMBEDDED AIR CONDITIONER
Next Patent: GRINDING METHOD AND GRINDING APPARATUS
Next Patent: GRINDING METHOD AND GRINDING APPARATUS