Title:
THREE-DIMENSIONAL MEMORY DEVICE PROGRAMMING WITH REDUCED DISTURBANCE
Document Type and Number:
WIPO Patent Application WO/2022/141618
Kind Code:
A1
Abstract:
A 3D memory device may include a first set of memory layers, a second set of memory layers above the first set of memory layers, and a first dummy memory layer between the first and second memory layers. The 3D memory device may include a plurality of NAND memory strings each extending through the first and second set of memory layers and the first dummy memory layer. The 3D memory device may include a word line (WL) driving circuit that, when programming one of the first set of memory layers, may be configured to apply a second pre-charge voltage to the first dummy memory layer during the pre-charge period. The second pre-charge voltage may overlap with the first pre-charge voltage and ramp down prior to the first pre-charge voltage.
Inventors:
SONG YALI (CN)
ZHAO XIANGNAN (CN)
MIN YUANYUAN (CN)
JIA JIANQUAN (CN)
YOU KAIKAI (CN)
ZHAO XIANGNAN (CN)
MIN YUANYUAN (CN)
JIA JIANQUAN (CN)
YOU KAIKAI (CN)
Application Number:
PCT/CN2021/070087
Publication Date:
July 07, 2022
Filing Date:
January 04, 2021
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/04; G11C16/08; G11C16/10
Foreign References:
| CN110660437A | 2020-01-07 | |||
| US20190189218A1 | 2019-06-20 | |||
| US20140340964A1 | 2014-11-20 | |||
| CN101552036A | 2009-10-07 | |||
| CN110945592A | 2020-03-31 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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