Title:
THREE-DIMENSIONAL MEMORY DEVICE PROGRAMMING WITH REDUCED THRESHOLD VOLTAGE SHIFT
Document Type and Number:
WIPO Patent Application WO/2022/141619
Kind Code:
A1
Abstract:
A three-dimensional (3D) memory device may include a first set of memory layers, a second set of memory layers above the first set of memory layers, and a first dummy memory layer between the first and second sets of memory layers. The 3D memory device may also include NAND memory strings each extending through the first and second sets of memory layers and the first dummy memory layer. The 3D memory device may further include a peripheral circuit configured to sequentially program each memory layer of the first set of memory layers, and then sequentially program each memory layer of the second set of memory layers. The peripheral circuit may include a word line (WL) driving circuit configured to when programming a first memory layer of the first set of memory layers, apply a first pre-charge voltage to the first dummy memory layer during a pre-charge period associated with the first memory layer, and when programming a second memory layer of the first set of memory layers located above the first memory layer, apply a second pre-charge voltage to the first dummy memory layer during a pre-charge period associated with the second memory layer. The first pre-charge voltage may be larger than the second pre-charge voltage.
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Inventors:
SONG YALI (CN)
ZHAO XIANGNAN (CN)
MIN YUANYUAN (CN)
YOU KAIKAI (CN)
ZHAO XIANGNAN (CN)
MIN YUANYUAN (CN)
YOU KAIKAI (CN)
Application Number:
PCT/CN2021/070088
Publication Date:
July 07, 2022
Filing Date:
January 04, 2021
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/10
Foreign References:
| US20190189218A1 | 2019-06-20 | |||
| US20200006379A1 | 2020-01-02 | |||
| US20090244967A1 | 2009-10-01 | |||
| CN110945592A | 2020-03-31 | |||
| CN111033626A | 2020-04-17 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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