Title:
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATION METHODS THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/103088
Kind Code:
A1
Abstract:
Three-dimensional (3D) memory devices having a memory layer that confines electron transportation and methods for forming the same are disclosed. A method for forming a 3D memory device includes the following operations. An initial channel hole (203) in a structure (202) is formed. The structure (202) includes a plurality of first layers (2021) and a plurality of second layers (2022) alternately arranged over a substrate (201). An offset between a side surface of each one of the plurality of first layers (2021) and a side surface of each one of the plurality of second layers (2022) can be formed on a sidewall of the initial channel hole (203) to form a channel hole (213). The channel hole (213) with a channel-forming structure can be formed to form a semiconductor channel (22). The channel-forming structure can include a memory layer (222) extending along a vertical direction. The plurality of second layers (2022) can then be replaced with a plurality of gate electrodes (242).
Inventors:
LIU JUN (CN)
XIAO LI HONG (CN)
XIAO LI HONG (CN)
Application Number:
PCT/CN2018/116980
Publication Date:
May 28, 2020
Filing Date:
November 22, 2018
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/1157
Domestic Patent References:
| WO2016025192A1 | 2016-02-18 |
Foreign References:
| US20140332875A1 | 2014-11-13 | |||
| KR20180059271A | 2018-06-04 | |||
| US20150008502A1 | 2015-01-08 | |||
| US20150108562A1 | 2015-04-23 | |||
| US20180219017A1 | 2018-08-02 |
Other References:
See also references of EP 3844814A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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