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Title:
THREE-DIMENSIONAL MEMORY AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2023/216360
Kind Code:
A1
Abstract:
Provided in the present disclosure is a method for forming a three-dimensional memory, the method comprising the following steps: forming a substrate and a stacking layer, wherein the stacking layer comprises first semiconductor layers and second semiconductor layers, which are alternately stacked, the thickness of the second semiconductor layer is D1, each first semiconductor layer comprises a plurality of channel regions, and a first region and a second region which are distributed in a first direction on two opposite sides of each channel region, and the first direction is parallel to a top surface of the substrate; forming a plurality of first openings which respectively expose the plurality of channel regions, wherein the width of a gap between every two adjacent first openings in a second direction is D2, D1>D2, and the second direction is parallel to the top surface of the substrate and intersects the first direction; and depositing a conductive layer along the first opening, wherein the conductive layer covers the channel region and fills the gap between adjacent first openings in the second direction. According to the present disclosure, a horizontal wordline structure is formed, and the electrical properties of the three-dimensional memory are improved.

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Inventors:
SHAO GUANGSU (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
BAI WEIPING (CN)
JIANG YI (CN)
SU XINGSONG (CN)
Application Number:
PCT/CN2022/098851
Publication Date:
November 16, 2023
Filing Date:
June 15, 2022
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108
Foreign References:
CN104157654A2014-11-19
CN111785725A2020-10-16
CN104022121A2014-09-03
US20180138193A12018-05-17
US20150380418A12015-12-31
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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