Title:
A THREE-DIMENSIONAL MEMORY
Document Type and Number:
WIPO Patent Application WO2003032372
Kind Code:
A8
Abstract:
In a three-dimensional integrated memory (3DiM), three-dimensional memories (3D-Ms) are integrated with conventional readable and writeable memories and/or data processors on a single chip. The overall performance of a 3DiM (such as speed, rate of finished products, programmability and data security) is superior to that of standalone 3D-Ms. The invention provides various types of methodsfor improving the capability of integration of said 3D-Ms. In addition, the invention also provides further improvement in the structure, circuit design and the like of 3D-Ms. One important application field of 3D-Ms is the integrated circuit testing : a 3D-M loaded with test data may be integrated with a test circuit, and thereby realize self-testing and high-speed testing on the spot.
Inventors:
ZHANG GUOBIAO (CN)
Application Number:
PCT/CN2002/000703
Publication Date:
September 18, 2003
Filing Date:
September 29, 2002
Export Citation:
Assignee:
ZHANG GUOBIAO (CN)
International Classes:
G11C7/18; G11C29/00; H01L27/06; (IPC1-7): H01L21/00
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