Title:
THREE-DIMENSIONAL PHASE-CHANGE MEMORY DEVICES AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2022/241635
Kind Code:
A1
Abstract:
A three-dimensional (3D) memory device includes a stack structure including interleaved a plurality of word line layers and a plurality of dielectric layers; and a plurality of phase-change memory (PCM) strings. Each of the PCM strings extends through the stack structure in a first direction and includes an isolation structure extending through the stack structure in the first direction; and a plurality of PCM string parts separated by the isolation structure. Each PCM string part includes a local bit line, a selector layer circumscribing the local bit line, and a plurality of PCM structures between the selector layer and the plurality of word line layers.
Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2021/094295
Publication Date:
November 24, 2022
Filing Date:
May 18, 2021
Export Citation:
Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
H01L27/24; H01L45/00
Foreign References:
| CN111969106A | 2020-11-20 | |||
| CN108122940A | 2018-06-05 | |||
| CN103531710A | 2014-01-22 | |||
| CN101452992A | 2009-06-10 | |||
| CN103187525A | 2013-07-03 | |||
| CN110914907A | 2020-03-24 | |||
| CN107580728A | 2018-01-12 | |||
| US20160218147A1 | 2016-07-28 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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