THREE-DIMENSIONAL PHASE-CHANGE MEMORY DEVICES AND METHODS FOR FORMING THEREOF - YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD

Title:

THREE-DIMENSIONAL PHASE-CHANGE MEMORY DEVICES AND METHODS FOR FORMING THEREOF

Document Type and Number:

WIPO Patent Application WO/2022/241634

Kind Code:

A1

Abstract:

A three-dimensional (3D) memory device includes a stack structure and a plurality of phase-change memory (PCM) strings. The stack structure includes interleaved a plurality of word line layers and a plurality of dielectric layers. Each of the PCM strings extends through the stack structure in a first direction and includes a local bit line, a selector layer circumscribing the local bit line, and a plurality of PCM structures between the selector layer and the plurality of word line layers, respectively, in a second direction perpendicular to the first direction.

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Inventors:

LIU JUN (CN)

Application Number:

PCT/CN2021/094294

Publication Date:

November 24, 2022

Filing Date:

May 18, 2021

Export Citation:

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Assignee:

YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)

International Classes:

H01L27/24

Foreign References:

CN112567525A	2021-03-26
US20200303006A1	2020-09-24
US8625322B2	2014-01-07
US20180211703A1	2018-07-26
US10833269B1	2020-11-10
US20210074726A1	2021-03-11

Attorney, Agent or Firm:

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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