TIN (II) HALIDE-BASED PEROVSKITE FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE AND PHOTOVOLTAIC DEVICE USING SAME - CHEMICAL MATERIALS EVALUATION AND RES BASE

Title:

TIN (II) HALIDE-BASED PEROVSKITE FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE AND PHOTOVOLTAIC DEVICE USING SAME

Document Type and Number:

WIPO Patent Application WO/2016/121700

Kind Code:

A1

Abstract:

In an X-ray diffraction chart of a tin (II) halide-based perovskite compound according to the present invention, the intensity ratio of a diffraction peak with the highest intensity corresponding to a tin (IV) compound present within a diffraction angle 2θ range of 10-50o inclusive to a diffraction peak of plane index (002) corresponding to the tin (II) halide-based perovskite compound is not grater than 10%.

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Inventors:

YAMADA KOJI (JP)
URANO TOSHIYUKI (JP)
TURKEVYCH IVAN (JP)

Application Number:

PCT/JP2016/052035

Publication Date:

August 04, 2016

Filing Date:

January 25, 2016

Export Citation:

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Assignee:

CHEMICAL MATERIALS EVALUATION AND RES BASE (JP)

International Classes:

C01G19/00; H01L21/368; H01L51/44; H01L51/48; C07F7/22

Domestic Patent References:

WO2014020499A1	2014-02-06
WO2013171517A1	2013-11-21

Foreign References:

JP2014056940A	2014-03-27
JP2001323387A	2001-11-22

Other References:

MITZI D.B. ET AL.: "Transport, Optical, and Magnetic Properties of the Conducting Halide Perovskite CH 3NH3SnI3", JOURNAL OF SOLID STATE CHEMISTRY, vol. 114, no. 1, 1995, pages 159 - 163, ISSN: 0022-4596

Attorney, Agent or Firm:

HAYAMI Shinji et al. (JP)
Shinji Hayami (JP)

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