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Title:
TRANSPARENT ELECTRICALLY CONDUCTIVE FILM AND PROCESS FOR PRODUCTION THEREOF, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/050161
Kind Code:
A1
Abstract:
The present invention provides: a transparent electrically conductive film comprising a base material layer, a gas barrier layer and a transparent conductive material layer, wherein the gas barrier layer comprises a material containing silicon (Si) atoms, oxygen (O) atoms and carbon (C) atoms, the contents of silicon (Si) atoms, oxygen (O) atoms and carbon (C) atoms in the surface layer part of the gas barrier layer are 18.0-28.0%, 48.0-66.0% and 10.0-28.0%, respectively, relative to the total amount, i.e., 100 at.%, of silicon (Si) atoms, oxygen (O) atoms and carbon (C) atoms, and the transparent electrically conductive film has a water vapor permeation rate of 6.0 g/m2/day or less under an atmosphere of 40˚C and 90% RH and a transmission rate for visible light having a wavelength of 550 nm of 90% or more; and others. According to the present invention, it becomes possible to provide a transparent electrically conductive film which has excellent gas barrier properties and transparency, and in which little fluctuation in sheet resistivity occurs even under high-temperature/high-humidity environments and the sheet resistivity is kept at a low level, and which has excellent electrical conductivity, and others.

Inventors:
NAGAMOTO KOICHI (JP)
KONDO TAKESHI (JP)
NAGANAWA SATOSHI (JP)
Application Number:
PCT/JP2011/073543
Publication Date:
April 19, 2012
Filing Date:
October 13, 2011
Export Citation:
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Assignee:
LINTEC CORP (JP)
NAGAMOTO KOICHI (JP)
KONDO TAKESHI (JP)
NAGANAWA SATOSHI (JP)
International Classes:
H01B5/14; B32B7/02; B32B9/00; G02F1/1333; H01L31/04; H01L51/50; H05B33/02; H05B33/14; H05B33/28
Domestic Patent References:
WO2011102198A12011-08-25
Foreign References:
JP2008041640A2008-02-21
JP2005071837A2005-03-17
Other References:
See also references of EP 2629307A4
Attorney, Agent or Firm:
OHISHI HARUHITO (JP)
Haruhito Oishi (JP)
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Claims: