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Title:
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS
Document Type and Number:
WIPO Patent Application WO/2010/077510
Kind Code:
A3
Abstract:
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

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Inventors:
YEDINAK JOSEPH A (US)
CHALLA ASHOK (US)
Application Number:
PCT/US2009/066118
Publication Date:
August 26, 2010
Filing Date:
November 30, 2009
Export Citation:
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Assignee:
FAIRCHILD SEMICONDUCTOR (US)
YEDINAK JOSEPH A (US)
CHALLA ASHOK (US)
International Classes:
H01L21/336; H01L29/78
Foreign References:
US20050258454A12005-11-24
US20070114590A12007-05-24
US20020063306A12002-05-30
US20070187748A12007-08-16
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