TRENCH MOS DEVICE AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2023/231502

A1

The present invention provides a trench MOS device and a manufacturing method therefor. A doped protection ring of a first conduction type is formed in a substrate below the bottom of a well region of the first conduction type; shielding columns of the first conduction type for electrically connecting the doped protection ring, a source region, and the well region are further formed in the substrate, and a trench gate is formed in the substrate of a region surrounded by the doped protection ring, such that a fence structure for protecting a weak breakdown point at the bottom of the trench gate is formed by forming the doped protection ring and the shielding columns, thereby improving the dielectric voltage withstand characteristics of the device. Moreover, the doped protection ring is electrically connected to a source metal layer by means of the shielding columns to achieve equipotential (such as grounding) of the doped protection ring, the source region, and the source electrode metal layer, such that an equipotential network is constructed, the anti-surge current capability of the device can be greatly improved, and then the reliability of the device is improved.

LI XIANG (CN)
XIE ZHIPING (CN)
CONG MAOJIE (CN)
LIANG XINYING (CN)

PCT/CN2023/081234

December 07, 2023

March 14, 2023

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YUEZHOU SEMICONDUCTOR MFG ELECTRONICS SHAOXING CORP (CN)

H01L29/06; H01L21/336; H01L29/78

WO2015104084A1

2015-07-16

DE102019212642A1	2021-02-25
CN114695518A	2022-07-01
CN110350035A	2019-10-18
CN113571584A	2021-10-29
US20130240981A1	2013-09-19
US9548354B1	2017-01-17

SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)

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