Title:
TRENCH MOS SCHOTTKY DIODE
Document Type and Number:
WIPO Patent Application WO/2018/155711
Kind Code:
A1
Abstract:
One embodiment of the present invention provides a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 which is formed from a Ga2O3 single crystal; a second semiconductor layer 11 which is laminated on the first semiconductor layer 10 and has a trench 12 that opens to a surface 17, while being formed from a Ga2O3 single crystal; an anode electrode 13 which is formed on the surface 17; a cathode electrode 14 which is formed on a surface of the first semiconductor layer 10, said surface being on the reverse side of the second semiconductor layer 11-side surface; an insulating film 15 which covers the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16 which is buried within the trench 12 of the second semiconductor layer 11 so as to be covered by the insulating film 15, while being in contact with the anode electrode 13. The second semiconductor layer 11 is configured from: a lower layer 11b which is on the first semiconductor layer side; and an upper layer 11a which is on the anode electrode 13 side, while having a higher donor concentration than the lower layer 11b.
Inventors:
SASAKI KOHEI (JP)
HIGASHIWAKI MASATAKA (JP)
HIGASHIWAKI MASATAKA (JP)
Application Number:
PCT/JP2018/007274
Publication Date:
August 30, 2018
Filing Date:
February 27, 2018
Export Citation:
Assignee:
TAMURA SEISAKUSHO KK (JP)
NAT INST INF & COMM TECH (JP)
NOVEL CRYSTAL TECH INC (JP)
NAT INST INF & COMM TECH (JP)
NOVEL CRYSTAL TECH INC (JP)
International Classes:
H01L29/872; H01L29/06; H01L29/20; H01L29/47
Domestic Patent References:
| WO2016013554A1 | 2016-01-28 |
Foreign References:
| JP2008140968A | 2008-06-19 | |||
| JPH08512430A | 1996-12-24 | |||
| JP2016181617A | 2016-10-13 | |||
| JP2007080971A | 2007-03-29 | |||
| CN104051548A | 2014-09-17 | |||
| JP2013102081A | 2013-05-23 |
Other References:
T. SHIMIZU ET AL., PROCEEDINGS OF 2001 INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, OSAKA, 2001, pages 243 - 246
V. KHEMKA ET AL., IEEE ELECTRON DEVICE LETTERS, vol. 21, no. 5, May 2000 (2000-05-01), pages 286 - 288
HIROYUKI MATSUNAMINOBORU OTANITSUNENOBU KIMOTOTAKASHI NAKAMURA: "Technology of Semiconductor SiC and its Application", 30 September 2011, NIKKAN KOGYO SHIMBUN, LTD., pages: 355
See also references of EP 3588580A4
V. KHEMKA ET AL., IEEE ELECTRON DEVICE LETTERS, vol. 21, no. 5, May 2000 (2000-05-01), pages 286 - 288
HIROYUKI MATSUNAMINOBORU OTANITSUNENOBU KIMOTOTAKASHI NAKAMURA: "Technology of Semiconductor SiC and its Application", 30 September 2011, NIKKAN KOGYO SHIMBUN, LTD., pages: 355
See also references of EP 3588580A4
Attorney, Agent or Firm:
HIRATA & PARTNERS (JP)
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