Title:
SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER
Document Type and Number:
WIPO Patent Application WO/2018/155710
Kind Code:
A1
Abstract:
A method for manufacturing a surface-emitting laser comprising a Group III nitride semiconductor by a MOVPE process, the method comprising: (a) a step of growing a first conductivity-type first cladding layer on a substrate; (b) a step of growing a first conductivity-type first guide layer on the first cladding layer; (c) a step of forming, in the first guide layer by etching, two-dimensionally periodic holes in a plane parallel with the first guide layer; (d) a step of closing opening portions of the holes by supplying a gas including a Group III raw material and a nitrogen source, and causing a growth such that a recess having a facet in a predetermined plane orientation is formed over the openings of the holes; and (e) a step of planarizing the recess by mass transport after the opening portions of the holes are closed. At least one of the sides of the holes after step (e) is a {10-10} facet.
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Inventors:
NODA SUSUMU (JP)
TANAKA YOSHINORI (JP)
DE ZOYSA MENAKA (JP)
SONODA JUNICHI (JP)
KOIZUMI TOMOAKI (JP)
EMOTO KEI (JP)
TANAKA YOSHINORI (JP)
DE ZOYSA MENAKA (JP)
SONODA JUNICHI (JP)
KOIZUMI TOMOAKI (JP)
EMOTO KEI (JP)
Application Number:
PCT/JP2018/007272
Publication Date:
August 30, 2018
Filing Date:
February 27, 2018
Export Citation:
Assignee:
UNIV KYOTO (JP)
STANLEY ELECTRIC CO LTD (JP)
STANLEY ELECTRIC CO LTD (JP)
International Classes:
C23C16/34; C30B29/38; H01L21/205; H01S5/185; H01S5/343
Foreign References:
| JP2011035078A | 2011-02-17 | |||
| JP2013093367A | 2013-05-16 | |||
| JP2009130110A | 2009-06-11 | |||
| JP2012033705A | 2012-02-16 | |||
| JP2004111766A | 2004-04-08 | |||
| US20130163628A1 | 2013-06-27 | |||
| JP5082447B2 | 2012-11-28 | |||
| JPS4818464B1 | 1973-06-06 |
Other References:
YOSHIMOTO, SUSUMU ET AL.: "GaN photonic-crystal surface-emitting laser operating at blue-violet wavelengths", CONFERENCE ON LASERS AND ELECTRO-OPTICS AND 2008 CONFERENCE ON QUANTUM ELECTRONICS AND LASER SCIENCE (CLEO/QELS 2008), November 2008 (2008-11-01), pages 1 - 2, XP055536533
NAGATOMO, YASUHIRO ET AL.: "GaN-based distributed- feedback surface-emitting laser with embedded two- dimensional photonic crystal fabricated by mass- transport technique", 22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, September 2010 (2010-09-01), pages 183 - 184, XP055536534
H. MIYAKE ET AL., JPN. J. APPL. PHYS., vol. 38, 1999
See also references of EP 3588704A4
NAGATOMO, YASUHIRO ET AL.: "GaN-based distributed- feedback surface-emitting laser with embedded two- dimensional photonic crystal fabricated by mass- transport technique", 22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, September 2010 (2010-09-01), pages 183 - 184, XP055536534
H. MIYAKE ET AL., JPN. J. APPL. PHYS., vol. 38, 1999
See also references of EP 3588704A4
Attorney, Agent or Firm:
LEXT, P.C. (JP)
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