Title:
TRENCH SCHOTTKY BARRIER DIODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/086689
Kind Code:
A1
Abstract:
A trench Schottky barrier diode and a manufacturing method therefor. The diode comprises: a semiconductor substrate (200); a back metal layer (208), located on a back surface of the semiconductor substrate (200); an epitaxial layer (201), located on a front surface of the semiconductor substrate (200), the epitaxial layer (201) comprising a plurality of first trench filling structures and second trench filling structures, feature sizes of the first trench filling structures being less than feature sizes of the second trench filling structures, the first trench filling structures being gate oxide layers (204) growing on a side wall and the bottom of a first trench (202) and gate material layers (205) growing on the gate oxide layers (204), and the second trench filling structures comprising gate oxide layers (204) located on a side wall and the bottom of a second trench (203) and gate material layers (205) growing on side walls of the gate oxide layers (204); and a barrier metal layer (207), located on a surface of the epitaxial layer (201). The Schottky barrier diode can improve an integration level, a forward current density and a peak repetitive Withstand voltage of a device.
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Inventors:
HU SHOUSHI (CN)
CHEN YONGNAN (CN)
CHEN YONGNAN (CN)
Application Number:
PCT/CN2015/087589
Publication Date:
June 09, 2016
Filing Date:
August 20, 2015
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
H01L29/872; H01L21/329
Foreign References:
| CN103887168A | 2014-06-25 | |||
| CN1672257A | 2005-09-21 | |||
| CN103151261A | 2013-06-12 | |||
| CN103887308A | 2014-06-25 | |||
| US20110227152A1 | 2011-09-22 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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