Title:
TUNGSTEN CAPACITOR ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/038959
Kind Code:
A1
Abstract:
The present invention relates to a capacitor element which sequentially comprises, on a positive electrode body containing tungsten, a dielectric layer that contains an amorphous tungsten oxide, a layer that covers a part or all of the dielectric layer and contains a crystalline tungsten oxide, a semiconductor layer and a conductor layer in this order.
A capacitor element according to the present invention has high heat resistance and is not susceptible to increase in LC after a high-temperature heat treatment such as a sealing process and processing in a reflow furnace.
A capacitor element according to the present invention is able to be manufactured by sequentially carrying out, in the following order: a sintering step for forming a positive electrode body by sintering a tungsten powder compact; a dielectric layer formation step for subjecting the positive electrode body to chemical conversion; a step for forming a crystalline tungsten oxide layer on the dielectric layer; a semiconductor layer formation step for forming a semiconductor layer; and a conductor layer formation step for forming a conductor layer.
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Inventors:
NAITO KAZUMI (JP)
YABE SHOJI (JP)
YABE SHOJI (JP)
Application Number:
PCT/JP2015/066962
Publication Date:
March 17, 2016
Filing Date:
June 12, 2015
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01G9/07; H01G9/00; H01G9/04; H01G9/052
Domestic Patent References:
| WO2013186970A1 | 2013-12-19 | |||
| WO2007013597A1 | 2007-02-01 | |||
| WO2013073332A1 | 2013-05-23 |
Foreign References:
| JP2006108626A | 2006-04-20 |
Attorney, Agent or Firm:
OHIE Kunihisa et al. (JP)
Landlord Kunihisa (JP)
Landlord Kunihisa (JP)
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