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Title:
TUNNELING FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2017/181404
Kind Code:
A1
Abstract:
A tunneling field-effect transistor and a manufacturing method therefor, relating to the technical field of electronics. The tunneling field-effect transistor comprises: a semiconductor substrate (110); a semiconductor nanosheet (120) vertically provided on the semiconductor substrate; a source region (121) and a drain region (122) that are connected to each other by means of a trench (123), the drain region, the trench, and the source region being sequentially provided on the semiconductor nanosheet; a gate dielectric layer (130) provided on the surface of the semiconductor nanosheet and at least surrounding the trench; and a gate metal layer (140) provided on the surface of the gate dielectric layer and surrounding the gate dielectric layer, the gate dielectric layer and the gate metal layer constituting a gate region that controls the tunneling of charge carriers in the tunneling field-effect transistor by means of an electric field, so as to form ON and OFF states of a device. The approach of manufacturing a tunneling field-effect transistor using a semiconductor nanosheet instead of multiple nanowires connected in parallel improves the current drive capability, reduces the design complexity and the manufacturing complexity of a circuit, simplifies the manufacturing process, reduces the process costs, and improves the mechanical stability of the tunneling field-effect transistor.

Inventors:
YANG XICHAO (CN)
ZHANG CHENXIONG (CN)
Application Number:
PCT/CN2016/079994
Publication Date:
October 26, 2017
Filing Date:
April 22, 2016
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
US20070228491A12007-10-04
CN104157687A2014-11-19
CN102484132A2012-05-30
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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