Title:
ULTRAVIOLET-TRANSPARENT ELECTRICALLY CONDUCTIVE THIN FILM AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/032874
Kind Code:
A1
Abstract:
An indium oxide base transparent electrically conductive thin film, comprising a seed layer and a main body layer attached in sequence to a side surface of a substrate material. The manufacturing method for the present indium oxide base transparent electrically conductive thin film mainly employs a metal-organic chemical vapour deposition method, using organometallic trimethyl indium as the indium source, high purity oxygen as the oxygen source, and tetra (dimethylamino) tin as the doping source, and specifically comprising the following steps: preprocessing the substrate material; growing the seed layer; and growing the main body layer. The indium oxide base transparent electrically conductive thin film acquired using the present indium oxide base transparent electrically conductive thin film manufacturing method has excellent conductivity; the spectral transmission region thereof extends to the deep ultraviolet band with an optical band gap of 4.1-4.6 eV; the surface morphology thereof can be precisely controlled; and the thin film is suitable for use as a near ultraviolet-deep ultraviolet band transparent electrically conductive thin film.
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Inventors:
WANG GANG (CN)
ZHUO YI (CN)
CHEN ZIMIN (CN)
FAN BINGFENG (CN)
MA XUEJIN (CN)
LI JIAN (CN)
ZHUO YI (CN)
CHEN ZIMIN (CN)
FAN BINGFENG (CN)
MA XUEJIN (CN)
LI JIAN (CN)
Application Number:
PCT/CN2017/089370
Publication Date:
February 22, 2018
Filing Date:
June 21, 2017
Export Citation:
Assignee:
FOSHAN RESEARCH INSTITUTE OF SUN YAT SEN UNIV (CN)
UNIV SUN YAT SEN (CN)
UNIV SUN YAT SEN (CN)
International Classes:
C30B25/18; C23C16/40; C30B25/08
Foreign References:
| US20040140198A1 | 2004-07-22 | |||
| JP2012219301A | 2012-11-12 | |||
| CN1945858A | 2007-04-11 | |||
| CN101792901A | 2010-08-04 |
Other References:
SZKUTNIK, P. D. ET AL.: "Study of the functional properties of ITO grown by metal organic chemical vapor deposition from different indium and tin precursors", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 603, 25 March 2014 (2014-03-25), pages 268 - 273, XP028652657
Attorney, Agent or Firm:
GUANGZHOU SHENGLIHUA-IP AGENT LTD. et al. (CN)
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