VACUUM-PROCESSING APPARATUS, VACUUM-PROCESSING METHOD, AND STORAGE MEDIUM

WIPO Patent Application WO/2013/179575

A1

[Problem] To provide a processing apparatus and processing method for stabilizing the resistance value of metal oxide film between substrates when a metal oxide film is formed on a substrate. [Solution] A target (31a) composed of a member for absorbing oxygen and a target (31b) composed of metal are disposed inside a vacuum container (2) capable of plasma sputtering, and a substrate (S) is conveyed into the vacuum chamber (2). The substrate (S) is covered with a cover plate (43), the target (31a) is sputtered and formed into a film inside the vacuum chamber (2), and oxygen inside the vacuum chamber (2) is made to adsorb onto the film. The cover plate (43) is moved from above the substrate S, the target (31b) is sputtered, and a metal film is formed on the substrate (S). The required amount of oxygen is fed from the cover plate (43), which has again been moved over the substrate (S), and a metal film is formed into a metal oxide film. The substrate (2) on which the target (31a) has been sputtered, on which oxygen inside the vacuum container (2) has been adsorbed, and on which a metal oxide film has been formed is conveyed out from the interior of the vacuum container (2).

FURUKAWA SHINJI (JP)
GOMI ATSUSHI (JP)
MIYASHITA TETSUYA (JP)
KITADA TORU (JP)
NAKAMURA KANTO (JP)

PCT/JP2013/002888

December 05, 2013

April 30, 2013

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TOKYO ELECTRON LTD (JP)

C23C14/58; C23C14/02; C23C14/08; H01L21/8246; H01L27/105; H01L43/12

WO2010074076A1

2010-07-01

JPH0499271A	1992-03-31
JP2007173843A	2007-07-05
JP2009084622A	2009-04-23

INOUE, TOSHIO (JP)
Toshio Inoue (JP)

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