METHOD FOR MANUFACTURING LAYERED FILM AND VACUUM-PROCESSING APPARATUS

Title:

METHOD FOR MANUFACTURING LAYERED FILM AND VACUUM-PROCESSING APPARATUS

Document Type and Number:

WIPO Patent Application WO/2013/179574

Kind Code:

A1

Abstract:

[Problem] To provide a technique by which high-processing efficiency can be obtained when a layered film, in which eight or more layers of a metal layer and a metal oxide layer are layered together, is manufactured. [Solution] A plurality of processing modules (PM) and wafer conveyance mechanisms (3) are arrayed between load-lock chambers (LL1, LL2). A wafer conveyance mechanism (3) is provided for transferring a wafer (W) from the load-lock chamber (LL1) to the upstream-end processing module (PM1), and a wafer conveyance mechanism (3) is provided for transferring the wafer (W) from the lower-end processing module (PM13) to the load-lock chamber (LL2). The processing modules include a plurality of processing modules for forming a metal film by sputtering on the wafer (W), and a processing module for oxidizing a metal film. Processing is carried out while the wafer (W) is transferred to the downstream side from the load-lock chamber (LL1) toward the load-lock chamber (LL2), whereby a layered film having eight or more layers can be manufactured using a single apparatus, and high-processing efficiency can be ensured.

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Inventors:

GOMI ATSUSHI (JP)
MIYASHITA TETSUYA (JP)
FURUKAWA SHINJI (JP)
MAEDA KOJI (JP)
HARA MASAMICHI (JP)
MIZUSAWA YASUSHI (JP)

Application Number:

PCT/JP2013/002887

Publication Date:

December 05, 2013

Filing Date:

April 30, 2013

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (JP)

International Classes:

C23C14/34; C23C14/06; H01L21/31; H01L21/316; H01L21/677; H01L21/8246; H01L27/105; H01L43/12

Domestic Patent References:

WO2009060540A1

2009-05-14

Foreign References:

JP2012039075A

2012-02-23

Attorney, Agent or Firm:

INOUE, TOSHIO (JP)
Toshio Inoue (JP)

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