Title:
VANADIUM COMPOUND, STARTING MATERIAL FOR THIN FILM FORMATION, AND METHOD FOR PRODUCING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2017/221586
Kind Code:
A1
Abstract:
A vanadium compound represented by general formula (1).
In general formula (1), R1 represents a linear or branched alkyl group having 1-7 carbon atoms, and preferably represents a secondary alkyl group or a tertiary alkyl group; and n represents a number of 2-4. Vanadium compounds represented by general formula (1) wherein n is 2 and R1 is a tertiary butyl group or a tertiary pentyl group are preferable since these compounds have a wide ALD window and a high thermal decomposition temperature and are capable of forming a vanadium-containing thin film having less carbon residue and good quality if used as an ALD material.
Inventors:
OKABE MAKOTO (JP)
NISHIDA AKIHIRO (JP)
YOSHINO TOMOHARU (JP)
NISHIDA AKIHIRO (JP)
YOSHINO TOMOHARU (JP)
Application Number:
PCT/JP2017/018235
Publication Date:
December 28, 2017
Filing Date:
May 15, 2017
Export Citation:
Assignee:
ADEKA CORP (JP)
International Classes:
C07C251/08; C07F9/00; C23C16/18; H01L21/285
Domestic Patent References:
| WO2012027357A2 | 2012-03-01 | |||
| WO2016203887A1 | 2016-12-22 |
Foreign References:
| US20150105573A1 | 2015-04-16 | |||
| JP2006511716A | 2006-04-06 | |||
| US20010055877A1 | 2001-12-27 | |||
| JP2013545755A | 2013-12-26 | |||
| JP2014534952A | 2014-12-25 |
Other References:
See also references of EP 3476827A4
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
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