Title:
VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2016/098661
Kind Code:
A1
Abstract:
This vapor deposition apparatus is provided with: a reaction chamber; a support unit which is provided in the reaction chamber and on which a substrate can be mounted; a first gas supply path which supplies a first gas containing ammonia; a second gas supply path which supplies a second gas that contains an organic metal gas; a purge gas supply path which supplies a purge gas that contains ammonia and at least one species selected from nitrogen, hydrogen and an inactive gas; and a shower plate which has a first region connected to the first gas supply path and the second gas supply path and having a process gas injection hole for supplying the first gas and the second gas into the reaction chamber, and a second region disposed in the outer periphery of the first region and comprising a purge gas injection hole that is connected to the purge gas supply path and supplies the purge gas into the reaction chamber.
Inventors:
TAKAHASHI HIDESHI (JP)
SATO YUUSUKE (JP)
SATO YUUSUKE (JP)
Application Number:
PCT/JP2015/084528
Publication Date:
June 23, 2016
Filing Date:
December 09, 2015
Export Citation:
Assignee:
NUFLARE TECHNOLOGY INC (JP)
International Classes:
H01L21/31; C23C16/455; C30B25/14; C30B29/38; H01L21/205
Foreign References:
| JP2011012331A | 2011-01-20 | |||
| JP2008244014A | 2008-10-09 | |||
| JP2014146767A | 2014-08-14 | |||
| JP2009170868A | 2009-07-30 | |||
| JP2004006556A | 2004-01-08 | |||
| JP2015002209A | 2015-01-05 |
Attorney, Agent or Firm:
IKEGAMI, Tetsuma et al. (JP)
Tetsuma Ikegami (JP)
Tetsuma Ikegami (JP)
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