VAPOR PHASE GROWTH DEVICE AND VAPOR PHASE GROWTH SYSTEM

Title:

VAPOR PHASE GROWTH DEVICE AND VAPOR PHASE GROWTH SYSTEM

Document Type and Number:

WIPO Patent Application WO/2019/131614

Kind Code:

A1

Abstract:

A vapor phase growth device (1) causes a chemical reaction in a plurality of different raw material gases (Gn) to form a substance on a substrate (S). The vapor phase growth device (1) comprises: a chamber (3); a holding unit (5); and a heating unit (7). The holding unit (5) is disposed inside the chamber (3) and holds the substrate (S). The heating unit (7) heats the substrate (S). The chamber (3) includes at least one raw material introduction port (GPn) for introducing the raw material gases (Gn) into the chamber (3). During a portion or the entirety of a period in which the substance is formed on the substrate, outflow of the raw material gases (Gn) from the inside of the chamber (3) to the outside is blocked.

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Inventors:

TAKEMOTO KIKUROU (JP)
ISHIKAWA KOICHI (JP)
MIHIRA HIROSHI (JP)

Application Number:

PCT/JP2018/047527

Publication Date:

July 04, 2019

Filing Date:

December 25, 2018

Export Citation:

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Assignee:

ACE INC (JP)

International Classes:

H01L21/205; C23C16/44; C23C16/455; C30B25/16; C30B29/38

Foreign References:

JPS63193518A	1988-08-10
JP2001358137A	2001-12-26
JP2013030752A	2013-02-07
JP2000216103A	2000-08-04
JP2014007378A	2014-01-16
JP2013102130A	2013-05-23

Attorney, Agent or Firm:

MAEI Hiroyuki (JP)

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