Title:
WIDE GAP SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/092870
Kind Code:
A1
Abstract:
A wide gap semiconductor device has: a drift layer 12 of a first electrical conductivity type; a well region 20 comprising a second electrical conductivity type, the well region 20 being provided to the drift layer 12; a source region 31 provided to the well region 20; a gate insulation film 60 provided to the drift layer 12 and the well region 20; a field insulation film 62 provided between the gate insulation film 60 and the well region 20; a gate electrode 125 provided to the gate insulation film 60; and a gate pad 120 electrically connected to the gate electrode 125. The field insulation film 62 has a recess extending in a plane direction. The well region 20 has a well contact region 21 that is electrically connected to a source pad 110 provided in the recess.
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Inventors:
NAKAMURA SHUNICHI (JP)
Application Number:
PCT/JP2017/040675
Publication Date:
May 16, 2019
Filing Date:
November 13, 2017
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L29/78; H01L29/12
Foreign References:
| JP2014150279A | 2014-08-21 | |||
| JP2013069954A | 2013-04-18 | |||
| JP2006202931A | 2006-08-03 | |||
| JP2002373988A | 2002-12-26 | |||
| JP2017041491A | 2017-02-23 | |||
| JPH02156572A | 1990-06-15 | |||
| JPH1174524A | 1999-03-16 |
Other References:
See also references of EP 3712958A4
Attorney, Agent or Firm:
OHNO Seiji et al. (JP)
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