Title:
WIRING STRUCTURE, SEMICONDUCTOR DEVICE PROVIDED WITH WIRING STRUCTURE, AND METHOD FOR MANUFACTURING SAID SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/099300
Kind Code:
A1
Abstract:
Provided are a wiring structure having Cu wiring with a damascene structure, a semiconductor device having that wiring structure, and a method for manufacturing same, such that increases in leak currents can be reliably suppressed even when the wiring structure or the semiconductor device having that wiring structure has gone through a heat treatment process or has been subjected to a heat history resulting from long-term use. The problem above is solved by directly providing copper wiring on a film that contains silicon (Si), carbon (C), and either oxygen (O) and/or nitrogen (N) as compositional components.
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Inventors:
SUGAWA SHIGETOSHI (JP)
TERAMOTO AKINOBU (JP)
KURODA RIHITO (JP)
XUN GU (JP)
TERAMOTO AKINOBU (JP)
KURODA RIHITO (JP)
XUN GU (JP)
Application Number:
PCT/JP2012/052158
Publication Date:
July 04, 2013
Filing Date:
January 31, 2012
Export Citation:
Assignee:
UNIV TOHOKU NAT UNIV CORP (JP)
SUGAWA SHIGETOSHI (JP)
TERAMOTO AKINOBU (JP)
KURODA RIHITO (JP)
XUN GU (JP)
SUGAWA SHIGETOSHI (JP)
TERAMOTO AKINOBU (JP)
KURODA RIHITO (JP)
XUN GU (JP)
International Classes:
H01L21/768; H01L21/314; H01L21/316; H01L21/3205; H01L23/52; H01L23/522
Foreign References:
| JP2007258457A | 2007-10-04 | |||
| JP2008294040A | 2008-12-04 | |||
| US6706629B1 | 2004-03-16 | |||
| JP2006128591A | 2006-05-18 | |||
| JP2008218507A | 2008-09-18 |
Attorney, Agent or Firm:
OHTSUKA, Yasunori et al. (JP)
Yasunari Otsuka (JP)
Yasunari Otsuka (JP)
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Claims: