Title:
YTTRIUM INGOT AND SPUTTERING TARGET USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/215376
Kind Code:
A1
Abstract:
Provided are an yttrium sputtering target that generates less particles, and an yttrium ingot from which an yttrium sputtering target that has high plasma resistance and a low resistance capable of achieving a high film formation rate can be obtained. This yttrium ingot is characterized in that: the content as a fluorine atom is at most 10 wt%; the surface roughness of the sputtered surface when targeted is 10 nm to 2 μm; the number of pores having a diameter of at least 100 μm in the yttrium ingot is at most 0.1 pores/cm2; and relative density is at least 96%.
Inventors:
TSUCHIDA YUYA (JP)
MESUDA MASAMI (JP)
HARA HIROYUKI (JP)
MATSUNAGA OSAMU (JP)
MESUDA MASAMI (JP)
HARA HIROYUKI (JP)
MATSUNAGA OSAMU (JP)
Application Number:
PCT/JP2021/015798
Publication Date:
October 28, 2021
Filing Date:
April 19, 2021
Export Citation:
Assignee:
TOSOH CORP (JP)
International Classes:
C23C14/34; B22D21/04; B22D29/00; C04B35/505; C04B35/645; H01L21/285
Domestic Patent References:
| WO2020090977A1 | 2020-05-07 | |||
| WO2013005349A1 | 2013-01-10 |
Foreign References:
| JPH06128738A | 1994-05-10 | |||
| JP2009001866A | 2009-01-08 | |||
| JP2014181390A | 2014-09-29 | |||
| JPS62252658A | 1987-11-04 | |||
| JP2006307311A | 2006-11-09 | |||
| JP2020076659A | 2020-05-21 | |||
| JP2020076665A | 2020-05-21 | |||
| JP2020085139A | 2020-06-04 | |||
| JP2020085189A | 2020-06-04 |
Other References:
P. LEI ET AL., SURFACE & COATINGS TECHNOLOGY, vol. 276, 2015, pages 39 - 46
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