Title:
n-TYPE LIGHT-ABSORBING LAYER ALLOY, METHOD FOR PRODUCING SAME, AND SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2013/172253
Kind Code:
A1
Abstract:
Provided are: a method for producing an n-type CIGS alloy or an n-type CIGSS alloy able to increase the conversion efficiency of a solar cell and able to highly precisely form a p-n homojunction layer at the interface between a light absorbing layer and a buffer layer; and a method for producing a solar cell. The n-type CIGS alloy is produced by means of: a first step for producing a CIG alloy by mixing copper, indium, and gallium, vacuum sealing the result in an ampoule, and causing crystallization at a high temperature; a second step for pulverizing the CIG alloy to produce a CIG alloy powder; and a third step for producing an n-type CIGS alloy by admixing selenium and a compound comprising a group IIb element and a group VIb element to the pulverized CIG alloy, and causing crystallization at a high temperature. The compound comprising a group IIb element and a group VIb element is cadmium selenide or zinc selenide. The n-type CIGSS5 alloy further includes sulfur, and the sulfur is added in the third step.
Inventors:
YOSHINO KENJI (JP)
NAGAOKA AKIRA (JP)
HIROSE TOSHIKAZU (JP)
YAMASHITA MIKA (JP)
NAGAOKA AKIRA (JP)
HIROSE TOSHIKAZU (JP)
YAMASHITA MIKA (JP)
Application Number:
PCT/JP2013/063086
Publication Date:
November 21, 2013
Filing Date:
May 09, 2013
Export Citation:
Assignee:
NIHON MICRONICS KK (JP)
MIYAZAKI UNIVERSITY (JP)
MIYAZAKI UNIVERSITY (JP)
International Classes:
H01L31/04; H01L21/363
Domestic Patent References:
| WO2011148600A1 | 2011-12-01 |
Foreign References:
| JP2000150931A | 2000-05-30 | |||
| JP2008235794A | 2008-10-02 | |||
| JP2011111641A | 2011-06-09 |
Attorney, Agent or Firm:
MIZUNO TSUNEO (JP)
Tsuneo Mizuno (JP)
Tsuneo Mizuno (JP)
Download PDF: