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Title:
ALLOY FOR Na-ADDED LIGHT-ABSORBING LAYER, METHOD FOR PRODUCING SAME, AND SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2013/172252
Kind Code:
A1
Abstract:
Provided are: a CIGS4-based alloy or a CIGSS5-based alloy that are such that it is possible to control the diffusion of Na into a CIGS film or CIGSS film, which is a light-absorbing layer of a solar cell, at a high precision, and that are such that the production of a solar cell is also easy; and a method for producing the CIGS4-based alloy and a CIGSS5-based alloy. The method for producing a CIGS4-based alloy to which Na has been added is provided with: a first step for producing a CIG3-based alloy by vacuum sealing a mixture containing copper, indium, and gallium in an ampoule, and causing crystallization at a high temperature; a second step for producing a CIG3-based alloy powder by pulverizing the CIG3-based alloy; and a third step for producing a CIGS4-based alloy by admixing selenium and sodium selenide to the pulverized CIG3-based alloy, vacuum sealing in an ampoule, and causing crystallization at a high temperature. The CIGSS5-based alloy further includes sulfur, and the sulfur is added in the third step.

Inventors:
YOSHINO KENJI (JP)
NAGAOKA AKIRA (JP)
HIROSE TOSHIKAZU (JP)
YAMASHITA MIKA (JP)
Application Number:
PCT/JP2013/063085
Publication Date:
November 21, 2013
Filing Date:
May 09, 2013
Export Citation:
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Assignee:
NIHON MICRONICS KK (JP)
MIYAZAKI UNIVERSITY (JP)
International Classes:
H01L31/04; H01L21/363
Domestic Patent References:
WO2011083646A12011-07-14
WO2011148600A12011-12-01
Foreign References:
JP2011111641A2011-06-09
JP2013100589A2013-05-23
Attorney, Agent or Firm:
MIZUNO TSUNEO (JP)
Tsuneo Mizuno (JP)
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