| Document |
Document Title |
|
WO/2011/072491A1 |
A chemical-mechanical polishing liquid for polishing silicon is disclosed. The polishing liquid comprises water, abrasive particles, as least one accelerant for silicon, and at least one inhibitor for silicon. By adjusting the contents o...
|
|
WO/2011/072493A1 |
A chemical-mechanical polishing liquid is provided. The polishing liquid comprises abrasive particles, a polymer, water, as well as a stabilizer for improving the stability of the polishing slurry. In the polishing liquid，the growth ra...
|
|
WO/2011/072490A1 |
A chemical-mechanical polishing liquid is disclosed, which comprises abrasive particles, an oxidant, a polyhydric compound, an organic base and water. The chemical-mechanical polishing liquid can considerably improve the removal rate of ...
|
|
WO/2011/072495A1 |
A chemical-mechanical polishing liquid for silicon-polishing is provided. The polishing liquid comprises water, abrasive particles, at least one accelerator for silicon and at least one inhibitor for silicon. By adjusting the contents of...
|
|
WO/2011/072492A1 |
A chemical mechanical polishing liquid for metal can be formed by combining the following substances: abrasive particles, a complexing agent and a corrosion inhibitor. By using the polishing liquid, the removal rate of metal is reduced a...
|
|
WO/2011/072494A1 |
A chemical-mechanical polishing liquid is provided. The polishing liquid comprises abrasive particles, corrosion inhibitors, oxidants, water and at least two complexing agents. The chemical-mechanical polishing liquid of the present inve...
|
|
WO/2011/069345A1 |
A chemical-mechanical polishing slurry and the use thereof are provided. The polishing slurry is used for chemical-mechanical polishing of copper. The polishing slurry comprises a star polymer surfactant containing pigment-affinity group...
|
|
WO/2011/069344A1 |
A chemical-mechanical polishing liquid is provided. The polishing liquid contains water, an abrasive, an oxidant and a water-soluble cationic surfactant. The present polishing liquid can reduce and eliminate the noises from polishing, im...
|
|
WO/2011/069343A1 |
A chemical-mechanical polishing liquid for polishing tantalum barrier is disclosed. The polishing liquid comprises abrasive particles, an organic acid, polyacrylics, a metal corrosion inhibitor, a quaternary ammonium base, an oxidant and...
|
|
WO/2011/064734A1 |
A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1 ) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary mat...
|
|
WO/2011/064735A1 |
An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous p...
|
|
WO/2011/060616A1 |
A chemical-mechanical polishing liquid and the use thereof are provided. The polishing liquid comprises a star polymer containing pigment-affinity group, abrasive particles, a complexing agent, an oxidant and water. While a relatively hi...
|
|
WO/2011/058503A1 |
A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium ...
|
|
WO/2011/054193A1 |
A chemical-mechanical polishing liquid is disclosed, which contains water, abrasive, oxidant and two or more non-ferrous transition-element metal salts. The polishing liquid can remarkably improve the polishing rate to tungsten.
|
|
WO/2011/006347A1 |
A chemical mechanical polishing liquid comprises: abrasive particles, hypophosphorous acid (H3PO2) or salts thereof, and surfactants. The polishing liquid is a brand new Oxide CMP formulation, and has a removal rate for oxide faster than...
|
|
WO/2011/006348A1 |
A chemical mechanical polishing liquid comprises silicon dioxide abrasive particles and crown ethers, and the pH of the polishing liquid is not greater than 7. The chemical mechanical polishing liquid can significantly improve the polish...
|
|
WO/2011/008631A2 |
Described are polymer compositions that include lattices (e.g., polymer emulsions or suspensions in an aqueous phase) and that contain a gloss reducing agent and that are useful in various finish compositions such as in floor care compos...
|
|
WO/2011/001650A1 |
Provided are a composition for floor polishing and an aqueous resin emulsion which has a low environmental impact, exhibits excellent leveling properties, and is capable of forming a membrane that can be easily coated onto a base materia...
|
|
WO/2010/149434A1 |
Aqueous dispersion comprising cerium oxide and silicon dioxide, obtainable by first mixing a cerium oxide starting dispersion and a silicon dioxide starting dispersion while stirring, and then dispersing at a shear rate of 10000 to 30000...
|
|
WO/2010/127938A1 |
An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-sol...
|
|
WO/2010/128094A1 |
A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing p...
|
|
WO/2010/127937A1 |
(A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant...
|
|
WO/2010/120784A1 |
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that compris...
|
|
WO/2010/112265A1 |
The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a su...
|
|
WO/2010/098919A1 |
A customizable sanding clay kit in accordance with the principles of the invention includes an aggressive flexible sanding composite and a mild flexible sanding composite. The aggressive flexible sanding composite may have a level of coa...
|
|
WO/2010/086510A1 |
The invention relates to a coating remover that comprises 0.5 to 50 parts by weightof an abrasive material selected from ceriumoxide,diamond powderor a mixture thereof, and 99.5 to 50 parts by weightof liquid that is alcohol, wa- ter, or...
|
|
WO/2010/087849A1 |
Plastic restoration kits and methods effectively the light transmission and optical clarity properties to a plastic light cover on an automobile or other plastic surface such as a sunglass lens or corrective optical lens. The kits and me...
|
|
WO/2010/085324A1 |
The present invention relates to a composition comprising a silane modified metal oxide, wherein the silane modified metal oxide comprises a metal oxide having attached at least one silyl group, and wherein the silyl group comprises at l...
|
|
WO/2010/069149A1 |
The invention provides a chemical-mechanical polishing liquid. It contains star polymer with a pigment-affinity group, abrasive particles, chelant，oxidant and water. The polishing liquid can reduce the dishing of a polished copper bloc...
|
|
WO/2010/070354A1 |
A clean-up fluid for cleaning fluid-carrying apparatus is described. The clean-up fluid comprises a liquid, typically water, and sufficient particles in admixture therewith to initiate a cleaning action in use within a fluid-carrying app...
|
|
WO/2010/063165A1 |
The invention discloses a chemical-mechanical polishing liquid which can remove dielectric material. The polishing liquid contains dimeric dumbbell-like and/or polymeric chain-like colloid silica abrasive particles having regular shape. ...
|
|
WO/2010/041223A1 |
The invention relates to molten grains having the following chemical composition in wt % in terms of oxides: Al2O3: balance to 100%; Zr02+Hf02: 16-24%; MgO in an amount such that the weight ratio (ZrO2+ HfO2)/MgO is between 25 and 65; ot...
|
|
WO/2010/040280A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising abrasive particles, hydrogen peroxide，persulfate and water. The pH value of the liquid is 9 ~12. The chemical-mechanical polishing liquid according to th...
|
|
WO/2010/037265A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising abrasive particles, oxidant and water. The liquid further comprises at least one inorganic salt for improving the removal rate of silicon dioxide, and at l...
|
|
WO/2010/037264A1 |
A chemical-mechanical polishing slurry is provided, which comprises abrasive particles and one or more organic salts selected from the group of aliphatic amine hydrochloride, aliphatic amine sulfate, amide hydrochloride, amide sulfate, a...
|
|
WO/2010/034181A1 |
The present invention discloses the use of an amine compound as shown by formula 1 for preparing a polishing liquid used to polish oxide dielectric materials, in which R1, R2 and R3 are hydrogen, (CH2)nCOOR4 or (CH2)nCONH2 respectively, ...
|
|
WO/2010/025623A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising colloidal silicon dioxide particles, organic carboxylic acid and/or organic phosphonic acid, potassium nitrate and water. To satisfy the demand of a chemic...
|
|
WO/2010/020466A1 |
The invention relates to a suspension of cerium oxide particles, of which the particles (secondary particles) have an average size of at most 200 nm, these secondary particles consisting of primary particles whose average size measured b...
|
|
WO/2010/017693A1 |
The present invention discloses a polishing liquid for chemical-mechanical abrading comprising water, abrasive particles and oxidant, wherein the oxidant comprises nitrate and metal salt at the same time. The cation of the nitrate is met...
|
|
WO/2010/012159A1 |
The present invention discloses a chemical-mechanical polishing liquid comprising collosol-type silicon dioxide, a rate accelerator, a surfactant and water. The present invention overcomes the disadvantages that the content of the abrasi...
|
|
WO/2010/009304A2 |
A glaze composition for application to a substrate includes a dry powder latex, a liquid latex emulsion, a coalescing solvent, a wax, a thickener and water The glaze is rewettable during application and is extremely durable after fully d...
|
|
WO/2009/153853A1 |
[PROBLEMS] To provide a coating composition which meets a desire in the market to maintain or recover the beauty of a coating surface through a simpler maintenance operation, and which can be efficiently applied to a coating surface and ...
|
|
WO/2009/133282A2 |
The invention relates to a liquid perfumed patina for covering surfaces, characterised in that the patina comprises a mixture containing: a vegetable oil; a natural plant or fruit essence particular in that it is perfumed; a cereal alcoh...
|
|
WO/2009/122921A1 |
Disclosed is an emulsion composition for floor polishing that, even though a film forming assistant is not substantially contained, has excellent film forming properties at a low temperature and, at the same time, can form a film having ...
|
|
WO/2009/110729A1 |
The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. The CMP slurry includes a polishing ab...
|
|
WO/2009/107986A1 |
The present invention relates to an aqueous slurry composition for chemical mechanical polishing that can show good polishing rate to the target layer, and yet has a high polishing selectivity and can maintain superior surface condition ...
|
|
WO/2009/102615A2 |
A particulate material comprising cerium oxide particles having a secondary particle size distribution in a range of 80 nm to 199 nm and a density of at least 6.6 g/cm3.
|
|
WO/2009/097937A1 |
Process for polishing silicon surfaces, in which a dispersion which comprises cerium oxide particles, at least one polymeric, anionic dispersing additive and at least one oxidizing agent and which has a pH of 7 to 10.5 is used, said ceri...
|
|
WO/2009/097737A1 |
A chemical mechanical polishing liquid which contains abrasive particles and water. The said polishing liquid further contains biguanides and azoles. The coexistence of biguanides and azoles produces synergistic effect and results in a s...
|
|
WO/2009/097938A1 |
Dispersion which contains cerium oxide particles and one or more polymeric, anionic dispersing additives, which are soluble in the liquid phase of the dispersion, and which has a pH in the range from 6 to 8, wherein the cerium oxide part...
|
