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JP4181129B2 |
The present invention provides methods of polishing and/or cleaning copper interconnects using bis(perfluoroalkanesulfonyl) imide acids or copper tris(perfluoroalkanesulfonyl) methide acids compositions.
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JP4180741B2 |
A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufac...
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JP4167804B2 |
A method of etching a metal oxide film includes depositing a metal (M) on the metal oxide film and contacting the metal oxide film and the metal (M) with an etch liquid comprising an acid (A) and a metal dissolution agent (X). The method...
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JP4164941B2 |
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JP4164954B2 |
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JP4162502B2 |
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JP4160562B2 |
The present invention is directed to certain fluorinated surfactants, and use thereof in acid etch solutions, such as in aqueous buffered acid etch solutions. The etch solutions are used with a wide variety of substrates, for example, in...
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JP4157185B2 |
A cleaning method and a cleaning device which require an extremely short time for processing and also insure and extremely high cleaning effect. Foreign materials deposited on a substrate are removed with a cleaning liquid prepared by mi...
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JP4151178B2 |
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JP4143876B2 |
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JP4141514B2 |
A composition for rinsing a memory hard disc, which comprises water and an additive selected from the group consisting of an oxo-acid, an oxo-acid salt and a chloride.
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JP4135906B2 |
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JP4125344B2 |
A method for purifying an aqueous alkaline solution, which comprises: bringing a fibrous activated carbon into contact with an aqueous alkaline solution-to remove a metal component other than alkali metals and alkaline earth metals from ...
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JP2008527106A |
An improved process for predictably treating a substrate surface is provided comprising the use of a pre-selected thixotropic etchants to achieve a superior and predetermined substrate surface.
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JP4115527B2 |
Process for the preparation of stilbene-disulphonic acids containing bis-alkoxy-triazinyl-amino, or derivatives thereof, characterized in that stilbene-disulphonic acids containing bis-chlorotriazinyl-amino, or derivatives thereof, are r...
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JP4104154B2 |
The invention provides an etching solution suitably using in the formation of a device hole, via hole and the like on a substrate of liquid crystal polymer by etching process; and a etching method of using thereof. An etching solution fo...
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JP4104320B2 |
The invention relates to a process for producing carbonyl difluoride. This process includes the steps of (a) reacting carbon monoxide with a first metal fluoride in a reactor, thereby obtaining carbonyl difluoride and a second metal fluo...
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JP2008124135A |
To provide a micromachining treatment agent for selectively micromachining only a silicon compound containing film when a laminated film with a silicon compound containing film and a polysilicon film or an amorphous silicon film being is...
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JP4090951B2 |
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JP4091540B2 |
Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluo-ride-free aqueous composition comprising a dicarboxylic acid and/or...
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JP2008115310A |
To provide an etching liquid for conductive polymers, which exhibits excellent etching performance to the conductive polymers.The etching liquid for the conductive polymers comprises (1) an etching liquid containing 5 wt.% hydrochloric a...
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JP4084929B2 |
The invention relates to a method for producing a high-purity solution that contains hydrogen fluoride or a salt thereof or a mixture of two or more thereof. The inventive method comprises the following step (i): hydrogen fluoride is pas...
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JP2008512869A |
Etchants for selective removal of high dielectric constant materials are described herein that comprise at least one fluorin-based constituent; water and at least one solvent or solvent mixture. Methods are also described herein for prod...
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JP4076852B2 |
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JP4070622B2 |
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JP4069961B2 |
This invention relates to a composition for cleaning and etching the surface in fabricating electronic displays and the substrates. Specifically this invention relates to a composition to effectively remove the contaminants by cleaning, ...
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JP4068453B2 |
The present invention provides a method of removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure having a plurality of copper lines. The method includes providing a chemical-mech...
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JP4068499B2 |
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JP2008066747A |
To provide a chemical formulation which enables the effective removal of a residue following a resist ashing process, wherein there is no possibility of attacking and breaking a brittle structure to be left on a wafer.The chemical formul...
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JP4062554B2 |
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JP2008050631A |
To provide an ion permeable diaphragm used for an alkaline water electrolytic apparatus and having low electric resistance.The ion permeable diaphragm 1 is made by forming on a film material 1A a plurality of through holes 11 penetrating...
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JP4054887B2 |
A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to rea...
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JP4055923B2 |
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JPWO2005091070A1 |
Consists of a fluorine-containing compound having a fluoroalkyl group having 1 to 5 carbon atoms or a perfluoropolyether having a molecular weight of 1000 or less for preparing a substrate having a pattern composed of a plurality of regi...
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JP4032916B2 |
An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crys...
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JP4028402B2 |
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JP4009986B2 |
A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d):(a) water,(b) at least one compound selected from the group consisting of a polyoxyethylene polyoxypropylene a...
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JP4010819B2 |
A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The me...
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JP4011486B2 |
The invention relates to azeotropic and azeotrope-like mixtures of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane (commonly known as HCFC-224aa, and with the IUPAC name of 2,2,3-trichloro-1,1,1,3-tetrafluoropropane;registry number 139754-75-...
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JP4010112B2 |
The invention comprises tungsten chemical-mechanical polishing processes using fixed abrasive polishing pads, and to tungsten layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed...
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JP2007532006A |
Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution wei...
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JP4001219B2 |
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JP3993369B2 |
A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified...
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JP2007254878A |
To provide an etching method using a hexavalent iron ion solution with less environmental load instead of an etching treatment agent such as harmful chromic acid conventionally used for improving adhesion property between a nonconductive...
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JP3974305B2 |
The present invention provides an etching agent that is able to etch a Cu film by a simple chemical etching method such as an immersion method when the low resistance Cu film is used for a wiring material, while allowing time-dependent c...
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JP3970763B2 |
The present invention relates to a CMP (chemical mechanical polishing) slurry composition and a method for planarizing a semiconductor device. The CMP composition comprises fumed silica, tetramethyl ammonium hydroxide, phosphates, fluori...
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JP3967522B2 |
To obtain a composition for mechanochemically polishing a layer in an insulation material based on a polymer having an adequate low dielectric constant. This composition for mechanochemically polishing a layer in an insulation material b...
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JP2007523500A |
An etched dielectric film for use in a hard disk drive. The dielectric film has a thickness of about 25 mum or greater when it is attached to a supporting metal substrate, and is subsequently etched to a thickness of about 20 mum or less.
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JP2007208018A |
To provide an etching solution which is improved in etching characteristics and used for single crystal silicon, and to provide a method of manufacturing a silicon deposition mask which is capable of stably mass-producing silicon deposit...
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JP3959352B2 |
The invention concerns a method for chemical attack of the surface of a plastic material with a solution based on sulphuric acid and chromic anhydride, characterised in that (i) the sulphuric acid concentration ranges between 500 and 760...
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