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JP4205674B2 |
An SiO2 layer ( 3 ), a Ti layer ( 4 ), a Pt layer ( 5 ), a PLZT layer ( 6 ) and an IrO2 layer ( 7 ) are formed sequentially on an Si substrate ( 2 ). The IrO2 layer ( 7 ) functioning as a top electrode has a thickness of about 100 nm. Si...
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JP2008309525A |
To provide an organic thin film for a dielectric bolometer manufacturable in a low-temperature process, for showing TCD having a sufficient size for putting the dielectric bolometer to practical use; an infrared detection device using it...
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JP4193074B2 |
To obtain stable pyroelectric performance without requiring processes such as extension, polarization, etc., by a method wherein an active component increasing an amount of dipole moment in a basic material is arranging in the basic mate...
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JP2008294129A |
To provide a thermionic generating element which operates in a low-temperature range.The thermionic generating element has its emitter 11 and collector made of materials whose work functions are less than a predetermined value, and is pr...
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JP4182404B2 |
To reduce the inclination of composition in the thickness direction of a film without dropping a film manufacturing speed extremely in the manufacturing method of a ferroelectric film. In the manufacturing method of the ferroelectric fil...
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JP4183789B2 |
A detector assembly for detecting a plurality of different properties at the same location at the same time is provided by integrating onto a single semiconductor substrate a first detector unit for measuring a first property and a secon...
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JP2008538861A |
A diamond-like carbon-based thermoelectric conversion device and a method for producing and using the thermoelectric conversion device, the thermoelectric conversion device has improved conversion efficiency and increased reliability. Th...
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JP2008232896A |
To provide an infrared detecting element of excellent crystallinity, by forming an orientation-controlled thin film on a single thin film.Gamma-Al2O3 thin film 6 is formed to be orientation-controlled on an upper face of a silicon substr...
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JP2008228386A |
To enable manufacturing electrodes (11, 12) for a thermoelectronic power generation element at low cost.The manufacturing method includes a step (P1) for forming an electrode body (21), made of a conductive material and having a surface ...
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JP2008228478A |
To prevent contact due to thermal distortion between emitters (21, 41) and collectors (22, 42), while improving power generation efficiency of a thermoelectronic power generator (1) by reducing the interval between the emitters (21, 41) ...
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JP4147299B2 |
To provide a compound power generation element and a compound power generation system in which power generation outputs of a thermionic power generator, and a plurality of alkali metal thermoelectric transducers and a flow of heat are co...
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JP2008198748A |
To provide a semiconductor sensor and the manufacturing method of the same capable of much more raising the detecting sensitivity of a physical amount.The semiconductor pressure sensor unit is provided with a stem 70, deformed in accorda...
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JP4135857B2 |
In an infrared ray sensor for a bolometer, a bridge structure body, a resistive element film for the bolometer, and a protection film is formed via a space on a substrate, and is formed into a solution form by dissolving metal organic co...
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JP4137196B2 |
The detector includes a Si substrate with two conducting electrodes (13,13) and a sensitive area (10) whose resistivity varies with temperature. The sensitive area is covered by a layer of n and p doped amorphous silicon. A reflector lay...
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JP4135856B2 |
An oxide for use in a bolometer with an oxide thin-film formed is manufactured on an insulating substrate. Metal organic compound is dissolved in solvent to form solution during manufacturing the oxide thin-film. The solution is applied ...
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JP2008531997A |
An infrared sensor, comprising a focal plane array (FPA) of resistance microbolometer infrared detectors connected in such a manner to produce different pixel formats to meet specific detection requirements. Typically each imaging pixel ...
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JP4124726B2 |
In a mass flow sensor having a layered structure on the upper side of a silicon substrate ( 1 ), and having at least one heating element ( 8 ) patterned out of a conductive layer in the layered structure, thermal insulation between the h...
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JP4123163B2 |
When electric power is obtained from a thermoelectric element, a value of electric current is changed, and two combinations of the electric current value and a voltage value (i 1 , V 1 ) and (i 2 and V 2 ) are obtained. An electric curre...
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JP4118774B2 |
To provide a thin film laminate wherein a high quality epitaxial growth layer is formed on a substrate on which an epitaxial thin film does not grow usually due to a difference of lattice constants, and to provide its manufacturing metho...
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JP2008147304A |
To provide a thermoelectric conversion element capable of facilitating a structure in a whole element, and to facilitate its manufacturing process.The thermoelectric transformation element 15 includes a thermoelectric material 16, having...
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JP2008521977A |
A process for purifying a P(VDF-TrFE) copolymer to produce an improved high performance copolymer for pyroelectric conversion. Pellets of a P(VDF-TrFE) copolymer are dissolved in a solvent to form a solution. Subsequently, anhydrous etha...
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JP4104445B2 |
An end face sensor device that has flexibility or bendability without being limited to its shape and can generate various apparatus with any shapes, and a method of producing the end face sensor device are provided. The end face sensor d...
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JP2008122336A |
To reduce complexity in a typical Wheatstone bridge sensor, using a single square silicon (SSS) sensor, to reduce an on-chip voltage by enhancing pressure sensitivity to reduce average electric power use, and to reduce a temperature grad...
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JP4085289B2 |
A pyroelectric ceramic composition contains a compound represented by (Pb 1-x Ca x ) (1+a) {(Ni 1/3 Nb 2/3 ) y Ti (1-y) }O 3 (wherein x, y, and a satisfy 0.20 ¤ x ¤ 0.27, 0.01 ¤ y ¤ 0.06, and 0.001 ¤ a ¤ 0.02, respectiv...
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JP4078157B2 |
To secure the function of another detecting element even if one detecting element is broken and to simplify a manufacturing process. A metal oxide 2 is divided into a plurality of parts, whereby a plurality of different information piece...
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JP2008512001A |
A thermoelectric composition comprises a material represented by the general formula (AgaX1-a)1±x(SnbPb1-b)mM'1-yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M' is a trivalent element selected from the group ...
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JP4073658B2 |
To provide an alloy which has negative resistance-temperature properties excellent in linearity. The ternary alloy consists of the three elements of B, Cr, and Si, and has compositional ranges of, by atom, 17 to 57% (preferably, 16 to 56...
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JP2008070353A |
To provide a silicon/germanium (SiGe) superlattice temperature sensor, together with a production method thereof.In the production method, while forming an active CMOS element on a first silicon substrate, an SiGe superlattice structure ...
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JP4067820B2 |
To provide a secondary battery in which a size and cost can be reduced. The secondary battery 1 comprises a power generating element 9, a battery case 3 for housing the power generating element 9, and a PTC element 15 for interrupting a ...
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JP4065653B2 |
To provide a Perovskite oxide laminate film and its manufacturing method which prevents a diffusion reaction due to contact of an alkali earth metal element of a lower oxide film with a metal element of an upper oxide film to obtain a st...
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JP4066518B2 |
To easily prepore a thin film having excellent electric characteristics by directly forming a PZT crystal thin film by reactive sputtering on a substrate and growing crystals of a PZT crystal thin film by a hydrothermal synthesizing meth...
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JP4063190B2 |
A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperatur...
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JP4063892B2 |
A thermal detector device comprising an array of thermal detector elements, an array of microbridge structures comprising the array of thermal detector elements, readout silicon integrated circuitry (ROIC) and an interconnect layer on wh...
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JP4062906B2 |
To permit simplifying of a mounting process of an infrared ray detecting element onto a circuit substrate, reduction of the amount of a conduc tive adhesive, the improvement of the sensitivity of a sensor, the shortening of a distance be...
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JP4063191B2 |
A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperatur...
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JP4055697B2 |
An IR source (100) comprises a thin film section (20) formed as a membrane arranged on a substrate (10), a resistor (15) on the thin film section and heated by introducing a current to it, and a strongly emitting film (30) arranged on th...
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JP4052041B2 |
To provide an infrared sensor having a new structure and easily manufactured. A via hole 12 is formed in a silicon substrate 11. Insulative films 14, 15 are disposed at an opening of the via hole 12 and form a membrane. An infrared absor...
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JP4053978B2 |
A microbolometer unit cell (10) includes a substantially planar upper-level incident radiation absorption and detection structure (24), a substantially planar middle-level radiation reflection structure (26) spaced apart from the upper-l...
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JP2008026205A |
To provide a thermal gas flow sensor capable of reducing changes over time in a heating resistor.The heating resistor 3 and temperature sensing resistors 4 and 14 are formed in a surface of a thin-wall part 2. Wiring parts 18-23 and pads...
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JP2008026206A |
To provide a thermal gas flow sensor capable of easily determining whether a strength reinforcing buffer film for preventing cracks in a diaphragm and an end of the diaphragm are superposed on each other in the thickness direction of a s...
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JP4044612B2 |
An array for projecting thermal images and a method of making same. The array of the present invention combines a two-tier architecture created with special processing whereby each pixel member resides on an elevated platform directly ov...
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JP4039004B2 |
To provide a pyroelectric material polarizing method and device capable of carrying out a treatment, by which each lot of the polarized pyroelectric material are nearly uniform in the amount of polarization regardless of the impurity con...
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JP4034142B2 |
To facilitate the troublesome manufacture of an element employing the diamond thin film having a thickness of 10 μm or less. The diamond thin film 101 is formed on a silicon substrate 102 by a vapor synthesizing method so as to have a t...
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JP4032521B2 |
To provide a method of manufacturing a sensor having a high sensitivity and a high mechanical strength during manufacturing process of the device. The manufacturing method of a sensor is at least constituted of a process for forming a su...
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JP4033331B2 |
A thermistor having multiple metal layers about at least a portion of a semiconductor body. The thermistor includes a first thick film electrode layer, a reactive metal layer, a barrier metal layer and, optionally, a layer to facilitate ...
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JP4024368B2 |
To obtain a long-life sensor having a heating type thin film element. The sensor comprises an Si substrate 101 having a hollow 102 and heating type thin film element 104 supported on the substrate 101 surrounding the hollow 102 with its ...
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JP2007309877A |
To provide an infrared detector dispensing with a germanium window transmitting an infrared ray. This infrared detector 10 includes an infrared detection element on one surface of a silicon substrate 1. The infrared detection element det...
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JP4008392B2 |
To provide a long-life and high-efficiency alkali metal thermoelectric generator. The alkali metal thermoelectric generator is characterized by comprising: a heater 1 that heats an alkali metal Na and holds it in a melted state; a genera...
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JP2007292461A |
To materialize a simple pyroelectric infrared sensor for detecting a central area and its peripheral area. Single elements 35a, 24a, 24b, and 35b are horizontally disposed/formed in order on a pyroelectric-body substrate 1. The single el...
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JP2007288923A |
To efficiently convert thermal energy into electrical energy. A PZT film 12 and an anode electrode 13 are disposed in a sealable case 11. Argon gas is supplied into the case 11 to form an gas atmosphere there, and then temperature change...
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