Title:
【発明の名称】半導体装置を形成する方法
Document Type and Number:
Japanese Patent JP2002502126
Kind Code:
A
Abstract:
In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step after oxidation. In a preferred embodiment, these steps are clustered and transportation between the clustered process chambers takes place in a controlled environment such as nitrogen or a vacuum. In some embodiments, the method provides an oxide layer to be used as part of the device, such as a tunnel oxide for a flash-EEPROM, or as a general gate oxide. Alternatively, the steps can be used to sculpt through oxidation various levels of a substrate, thereby allowing for embedded memory architecture. Cleaning between oxidation steps offers the advantage of providing a more defect-free oxide layer or providing access to a more defect-free level of substrate.
Inventors:
Sakur, Randyel Pee
Application Number:
JP2000529752A
Publication Date:
January 22, 2002
Filing Date:
January 21, 1999
Export Citation:
Assignee:
MICRON TECHNOLOGY,INC.
International Classes:
H01L21/28; H01L21/304; H01L21/316; H01L21/762; H01L29/51; (IPC1-7): H01L21/316; H01L21/28; H01L21/304
Attorney, Agent or Firm:
Kunihiko Ohashi