Title:
【発明の名称】銅/タンタル基体に有用な化学的機械研磨スラリー
Document Type and Number:
Japanese Patent JP2002519475
Kind Code:
A
Abstract:
The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.
Inventors:
Kaufman, Blaster Brush
Kistler, Rodney Sea.
One, Shumin
Kistler, Rodney Sea.
One, Shumin
Application Number:
JP2000557321A
Publication Date:
July 02, 2002
Filing Date:
June 25, 1999
Export Citation:
Assignee:
Cabot Microelectronics Corporation
International Classes:
C09G1/02; C09K3/14; H01L21/304; H01L21/321; (IPC1-7): C09K3/14; C09G1/02; H01L21/304
Attorney, Agent or Firm:
Takashi Ishida (4 others)