Title:
【発明の名称】薄膜トランジスタ
Document Type and Number:
Japanese Patent JP2002522907
Kind Code:
A
Abstract:
A thin film transistor has source (20) and drain (10) electrodes which each comprise a coiled elongate portion. One (14) of these portions coils inwardly to a central connector portion (12), and the other (22) coils outwardly to a peripheral connector portion (16). The two coiled portions are interlinked to define between them a substantially uniform spacing (24) corresponding to a channel region of the transistor. This arrangement enables the length to width ratio of the transistor to be reduced, giving rise to an increased current capacity of the transistor. By making one elongate portion (14) longer than the other (22), the transistor can have a source-gate capacitance lower than its drain-gate capacitance. These transistors may form switching elements in large area electronic devices, such as electroluminescent displays, plasma displays, electrostatic print heads, and X-ray dynamic beam attenuators.
Inventors:
Martin Powell, Martin Jay
Application Number:
JP2000564237A
Publication Date:
July 23, 2002
Filing Date:
July 27, 1999
Export Citation:
Assignee:
Konin Krekka Philips Electronics NV
International Classes:
H01L29/417; H01L29/786; G09F9/30; (IPC1-7): H01L29/786; G09F9/30
Attorney, Agent or Firm:
Tadahiko Ito