Title:
【発明の名称】化学気相成膜反応室及びそのための処理室
Document Type and Number:
Japanese Patent JP2003518199
Kind Code:
A
Abstract:
A chemical vapor deposition reactor having a process chamber accommodating a substrate holder for wafers, a first gas flow of reactive gases to process the wafers and a crown-shaped gas-collector surrounding the substrate-holder, wherein said reactor further comprises: a base plate and a cover plate disposed respectively beneath and above the substrate-holder, an outer ring surrounding the gas-collector and touching both the base plate and the cover-plate, and a second flow of non-reactive gases propagating in spaces outside the process chamber limited by the base and cover plates and the outer ring, and said second flow acting as a counter-flow for preventing the first reactive gas flow to exit from the process chamber but through the gas-collector.
More Like This:
Inventors:
Frejurank, Peter
Application Number:
JP2001546988A
Publication Date:
June 03, 2003
Filing Date:
November 30, 2000
Export Citation:
Assignee:
Ixtron, Age
International Classes:
C23C16/44; C30B1/00; C30B25/14; C23C16/455; H01L21/205; (IPC1-7): C23C16/455; H01L21/205
Attorney, Agent or Firm:
Takashiro Kojima