Title:
【発明の名称】プラズマ反応チャンバを洗浄および条件付けする方法
Document Type and Number:
Japanese Patent JP2003518328
Kind Code:
A
Abstract:
A method for cleaning and conditioning interior surfaces of a plasma chamber in which substrates such as silicon wafers are processed. The method includes cleaning the chamber such as by a wet clean or in-situ plasma clean, introducing a conditioning gas into the chamber, energizing the conditioning gas into a plasma state, depositing a polymer coating on the interior surfaces and processing a substrate. The conditioning step can be performed without a substrate such as a wafer in the chamber and the processing step can be carried out without running conditioning wafers through the chamber prior to processing production wafers. In the case of a plasma chamber used for etching aluminum, the conditioning gas can include a fluorine-containing gas, a carbon-containing gas and a chlorine-containing gas.
Inventors:
Richardson, Brett, Sea.
Outka, Duane
Outka, Duane
Application Number:
JP2001546982A
Publication Date:
June 03, 2003
Filing Date:
December 08, 2000
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
C23C16/44; H01L21/3065; (IPC1-7): H01L21/3065; C23C16/44
Domestic Patent References:
| JPH0487329A | 1992-03-19 | |||
| JPH07335626A | 1995-12-22 | |||
| JPH11340215A | 1999-12-10 | |||
| JPH08213370A | 1996-08-20 |
Attorney, Agent or Firm:
Yasunori Otsuka (3 others)