Title:
MEMSデバイス形成のためのエッチストップ制御
Document Type and Number:
Japanese Patent JP2005534513
Kind Code:
A
Abstract:
A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.
Inventors:
Honing, robert dee
Application Number:
JP2004526097A
Publication Date:
November 17, 2005
Filing Date:
August 05, 2003
Export Citation:
Assignee:
Honeywell International Inc.
International Classes:
B81B7/02; B81C1/00; H01L21/306; H01L29/84; (IPC1-7): B81C1/00; B81B7/02; H01L21/306; H01L29/84
Attorney, Agent or Firm:
Kazuo Shamoto
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shigeo Takeuchi
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shigeo Takeuchi