Title:
回折格子を変えることによって、基板上に形成された半導体素子を分離する方法、装置および回折格子
Document Type and Number:
Japanese Patent JP2007516840
Kind Code:
A
Abstract:
The present application discloses a method of separating semiconductor elements formed in a wafer (12) of semiconductor material using a laser (1) producing a primary laser beam (2). Said at least one primary laser beam (2) is split into a plurality of secondary laser beams (5) using a first diffraction grating (4) having at least a first grating structure relative to said wafer (12), by impinging said at least one primary laser beam (2) on said first grating structure (4). At least one first score is formed by moving said laser beam (5) relative to said wafer (12) in a first direction. The method further comprises a step of forming at least one second score by moving said laser beam (5) relative to said wafer (12) in a second direction (17). Before the step of moving said laser beam (5) relative to said wafer (12) in the second direction (17), the method comprises a step of altering said first grating structure (4) to a second grating structure relative to said wafer (12). In addition, an arrangement and diffraction grating (4,14) for use in this method are also disclosed.
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Inventors:
Hendrix Petrus Vanderlark
Hans Peter Char
Hans Peter Char
Application Number:
JP2006546876A
Publication Date:
June 28, 2007
Filing Date:
December 29, 2004
Export Citation:
Assignee:
Advanced Laser Separation International BV
International Classes:
B23K26/38; B23K26/00; B23K26/06; B23K26/067; B23K26/08; B23K26/40; G02B3/00; G02B3/08; G02B5/18; G02B27/10; G02B27/42; H01L21/301; H01L21/304; H01L21/78; B23K101/40
Domestic Patent References:
| JPH11503880A | 1999-03-30 | |||
| JPH07290264A | 1995-11-07 |
Foreign References:
| WO2000053365A1 | 2000-09-14 |
Attorney, Agent or Firm:
Kosaku Sugimura
Shiro Fujitani
Kiyoshi Kuruma
Yoshiyuki Iwasa
Shiro Fujitani
Kiyoshi Kuruma
Yoshiyuki Iwasa