Title:
有機半導体マトリックス材料、有機半導体および電子部品用のn‐ドーパントとしての金属錯体の使用、並びにドーパントおよびリガンドとそれらの製造方法
Document Type and Number:
Japanese Patent JP2007526640
Kind Code:
A
Abstract:
The method involves using a metal complex as a dopant for doping an organic semiconducting matrix material to vary the electrical properties, whereby the metal complex represents an n-dopant relative to the matrix material, or using a metal complex to produce an electronic component with an electronically functional region containing the metal complex. The metal complex is a neutral electron-rich metal complex. Independent claims are also included for the following: (A) a semiconducting material (B) an organic semiconducting material (C) a method of manufacturing an organic semiconducting material (D) an electronic component (E) a dopant (F) a ligand for a metal complex (G) and the use of a ligand in a process of manufacturing a dopant.
More Like This:
| WO/2019/065056 | ORGANIC THIN FILM TRANSISTOR |
| JPWO2006064776 | Manufacturing method of organic thin film transistor |
| JP2008098180 | ORGANIC ELEMENT |
Inventors:
Ansgar, Berner
Olaf, Cure
Gimon, Guessler
Kentaro, Harada
Horst, hartmann
Andre, Grushing
Michael, Rimmelt
Andrea, Looks
Olaf, Cure
Gimon, Guessler
Kentaro, Harada
Horst, hartmann
Andre, Grushing
Michael, Rimmelt
Andrea, Looks
Application Number:
JP2007501110A
Publication Date:
September 13, 2007
Filing Date:
March 03, 2005
Export Citation:
Assignee:
NOVALED AG
International Classes:
H01L51/30; C07F5/02; C07F11/00; C09K11/06; H01L51/00; H01L51/05; H01L51/40; H01L51/50; C07D213/38
Foreign References:
| WO2003088271A1 | 2003-10-23 | |||
| US20030203168A1 | 2003-10-30 |
Attorney, Agent or Firm:
Kenji Yoshitake
Yukitaka Nakamura
Konno Akio
Noritaka Yokota
Masaharu Takamura
Yukitaka Nakamura
Konno Akio
Noritaka Yokota
Masaharu Takamura