Title:
ガス化学反応および炭化水素付加の周期的変調を用いたプラズマストリッピング方法
Document Type and Number:
Japanese Patent JP2008502146
Kind Code:
A
Abstract:
A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
Inventors:
Yoon Seok Min
Chu Ji
Siligrian Peter
Lee Sanheon
Choi Thomas S.
Ravenhard Peter
Wilcoxson Mark H.
Sajadi Reza
Hudson Eric A.
Teache James Buoy.
Chu Ji
Siligrian Peter
Lee Sanheon
Choi Thomas S.
Ravenhard Peter
Wilcoxson Mark H.
Sajadi Reza
Hudson Eric A.
Teache James Buoy.
Application Number:
JP2007515400A
Publication Date:
January 24, 2008
Filing Date:
May 27, 2005
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
G03F7/40; H01L21/3065; G03F7/42; H01L21/027; H01L21/302; H01L21/311; H01L21/461
Domestic Patent References:
| JPH10209118A | 1998-08-07 | |||
| JP2004119539A | 2004-04-15 |
Attorney, Agent or Firm:
Meisei International Patent Office
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